似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

NVBG070N120M3S

Name: onsemi NVBG070N120M3S
Brand: onsemi
SKU: 863-NVBG070N120M3S
Price: 590.45 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

863-NVBG070N120M3S

製造商編號：

NVBG070N120M3S

製造商：

onsemi

說明：

碳化矽MOSFET SIC MOS D2PAK-7L 70MOHM 1200V M3

規格書:

NVBG070N120M3S 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於onsemi NVBG070N120M3S的資訊

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
REACH - SVHC:
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-7
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	25 A
Rds On - 漏-源電阻:	87 mOhms
Vgs - 閘極-源極電壓:	- 10 V, + 22 V
Vgs th - 門源門限電壓 :	4.4 V
Qg - 閘極充電:	57 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	172 W
通道模式:	Enhancement
公司名稱:	EliteSiC
品牌:	onsemi
配置:	Single
下降時間:	8.8 ns
互導 - 最小值:	12 S
封裝:	Reel
封裝:	Cut Tape
產品類型:	SiC MOSFETS
上升時間:	12 ns
系列:	NVBG070N120M3S
原廠包裝數量:	800
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	30 ns
標準開啟延遲時間:	11 ns

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

NVBG070N120M3S 規格書

PCN

Product Change Notification 2025-9-26 (PDF)

合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 中國
擴散國:: 大韓民國

出貨時，國家可能會有所變更。

Electric Commercial Agricultural Vehicles (eCAVs)

onsemi Electric Commercial Agricultural Vehicles (eCAVs) are transforming modern agriculture, replacing diesel and gasoline engines with battery-electric, hybrid-electric, and range-extended drivetrains across tractors, harvesters, sprayers, loaders, utility and transport vehicles, and autonomous field robots. Advancements in lithium-ion and LFP batteries, government incentives, rising fuel and maintenance costs, and growing pressure to reduce emissions have helped drive the global eCAV market from $2.0 billion in 2025 to $4.63 billion by 2031, representing a 14.99% CAGR. The result is quieter, lower-maintenance machines that deliver instant torque, regenerative braking, and lower operating costs per hour.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NVBG070N120M3S Silicon Carbide (SiC) MOSFET

onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET designed for fast switching applications. This MOSFET offers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The NVBG070N120M3S SiC MOSFET features a 57nC ultra-low gate charge, 57pF high-speed switching with low capacitance, and 65mΩ typical drain-to-source ON resistance at V_GS=18V. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG070N120M3S SiC MOSFET is available in a D2PAK-7L package and is Lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.