Name: onsemi NCV57001FDWR2G
Brand: onsemi
SKU: 863-NCV57001FDWR2G
Price: 170.65 TWD
Availability: InStock

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	電氣隔離式閘極驅動器
RoHS:
系列:	NCV57001FDWR2G
安裝風格:	SMD/SMT
最低工作溫度:	- 40 C
最高工作溫度:	+ 125 C
上升時間:	10 ns
下降時間:	15 ns
封裝:	Reel
封裝:	Cut Tape
品牌:	onsemi
配置:	Inverting, Non-Inverting
驅動器數:	1 Driver
輸出數:	1 Output
輸出電流:	4 A
產品:	IGBT, MOSFET Gate Drivers
產品類型:	Galvanically Isolated Gate Drivers
原廠包裝數量:	1000
子類別:	PMIC - Power Management ICs
電源電壓 - 最大值:	5 V
電源電壓 - 最小值:	3.3 V

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

NCV57001FDWR2G 規格書

Material Composition Disclosure

合規守則

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

原產地分類

原產國:: 菲律賓
封裝原產國:: 菲律賓
擴散國:: 美國

出貨時，國家可能會有所變更。

將閘極驅動器與EliteSiC MOSFET搭配使用

電動車充電、能源儲存、不斷電系統 (UPS) 和太陽能等能源基礎設施應用正在將系統功率推至數百千瓦，甚至兆瓦等級。這些高功率應用採用半橋、全橋和三相拓撲，為逆變器和BLDC提供多達6個開關的工作週期。視功率等級和開關速度而定，系統設計人員需要包括矽、IGBT和SiC等各種不同的開關技術來滿足其應用要求。

NCV57001F IGBT Gate Driver

onsemi NCV57001F IGBT Gate Driver is a high-current single-channel IGBT driver with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT, and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. onsemi NCV57001F IGBT Gate Driver accommodates 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. This gate driver provides >5kV_rms (UL1577 rating) galvanic isolation and >1200V_iorm (working voltage) capabilities. Typical applications include automotive power supplies, hybrid/electric vehicle (HEV/EV) powertrains, BSG inverters, and positive temperature coefficient (PTC) heaters.

特色產品

ONSEMI

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating.

了解更多

NCD57081 Gate Drivers

High-current IGBT gate drivers with 3.75kVrms internal galvanic isolation for reliable performance.

了解更多

NCD57100 Gate Drivers

High-current single-channel IGBT drivers featuring internal galvanic isolation.

了解更多

NCP51563 Gate Drivers

Isolated drivers designed for fast switching to drive power MOSFETs and SiC MOSFET power switches.

了解更多

將閘極驅動器與EliteSiC MOSFET搭配使用

完整的閘極驅動器和EliteSiC MOSFET產品組合，搭配使用時可提高熱效能。

了解更多

數量	單價	總價
	NT$170.65	NT$170.65
	NT$121.89	NT$1,218.90
	NT$119.38	NT$2,984.50
	NT$96.44	NT$9,644.00
	NT$95.36	NT$23,840.00
	NT$89.63	NT$44,815.00
完整捲（訂購多個1000）
	NT$82.81	NT$82,810.00
	NT$80.66	NT$161,320.00

NCV57001FDWR2G

製造商：

onsemi

說明：

電氣隔離式閘極驅動器 ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

規格書

將閘極驅動器與EliteSiC MOSFET搭配使用

NCV57001F IGBT Gate Driver

特色產品

ONSEMI

庫存量: 1,143

Pricing (TWD)

NCV57001FDWR2G

製造商： onsemi

說明： 電氣隔離式閘極驅動器 ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

規格

文件 (1)

規格書

環境文檔

產品與貿易合規

更多資訊

將閘極驅動器與EliteSiC MOSFET搭配使用

NCV57001F IGBT Gate Driver

客戶還購買了

特色產品 ONSEMI

庫存量: 1,143

Pricing (TWD)

產品速覽

發生意外的錯誤。

製造商：

onsemi

說明：

電氣隔離式閘極驅動器 ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

特色產品

ONSEMI