T/T-1 Industrial IGBT Modules

Mitsubishi Electric T/T-1 Industrial Insulated Gate Bipolar Transistor (IGBT) Modules are equipped with a three-phase converter, inverter, and brake circuit (CIB), simplifying the design for inverter systems. The CIB modules reduce package size by 36% compared to the existing module. The T/T-1 series utilizes a 7th-generation IGBT produced using CSTBT™ and a diode while incorporating a relaxed field of cathode (RFC) structure. The construction eliminates the solder-attached section, increasing the thermal cycle lifetime. Mitsubishi Electric T/T-1 Industrial IGBT Modules improve the reliability of inverters, reduce power loss, and simplify the assembly process.

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Description Datasheet Availability Pricing (TWD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Technology
Mitsubishi Electric IGBT Modules IGBT MODULE S-SERIES NX TYPE 7-PAC
Datasheet

IGBT Modules Si
Mitsubishi Electric IGBT Modules IGBT MODULE SA-SERIES NX TYPE 7-PAC
Datasheet

IGBT Modules Si
Mitsubishi Electric IGBT Modules IGBT MODULE S-SERIES NX TYPE 6-PAC
Datasheet

IGBT Modules Si
Mitsubishi Electric IGBT Modules IGBT MODULE S-SERIES DUAL
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IGBT Modules Si
Mitsubishi Electric IGBT Modules IGBT MODULE NF-SERIES DUAL
Datasheet

IGBT Modules Si
Mitsubishi Electric IGBT Modules IGBT MODULE NF-SERIES DUAL
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IGBT Modules Si
Mitsubishi Electric IGBT Modules IGBT MODULE NF-SERIES DUAL
Datasheet
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IGBT Modules Si