DRAM

結果: 2,712
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Winbond W958S6NBJX4I
Winbond DRAM 256Mb HyperRAM x16, 250MHz, Ind temp, 1.2V
490預期2027/2/19
最少: 1
倍數: 1

HyperRAM 256 MB 250 MHz - 40 C + 85 C Tray
Winbond W958S8NBPA4I
Winbond DRAM 256Mb HyperRAM x8, 250MHz, Ind temp, 1.2V
480預期2027/2/19
最少: 1
倍數: 1

HyperRAM 256 MB 250 MHz - 40 C + 85 C Tray
Winbond W958S8NMPA4I
Winbond DRAM 256Mb HyperRAM x8, 250MHz, Ind temp, 1.2V
480預期2027/2/19
最少: 1
倍數: 1

HyperRAM 256 MB 250 MHz - 40 C + 85 C Tray
Winbond W959S6NBJX4I
Winbond DRAM 512Mb HyperRAM x16, 250MHz, Ind temp, 1.2V
490預期2027/2/19
最少: 1
倍數: 1

HyperRAM 512 MB 250 MHz - 40 C + 85 C Tray
Winbond W959S8NMPA4I
Winbond DRAM 512Mb HyperRAM x8, 250MHz, Ind temp, 1.2V
480預期2027/2/19
最少: 1
倍數: 1

HyperRAM 512 MB 250 MHz - 40 C + 85 C Tray
Infineon Technologies S80KS2562GABHI023
Infineon Technologies DRAM SPCM
2,500在途量
最少: 1
倍數: 1
: 2,500

Reel, Cut Tape
Infineon Technologies S27KL0642GABHB020
Infineon Technologies DRAM SPCM
1,352在途量
最少: 1
倍數: 1

Tray
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS, IT
26,972預期2026/9/22
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 143 MHz TSOP-II-54 16 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C IS42S16160G Tray
Zentel Japan DRAM DDR4 4Gb, 256Mx16, 3200 CL22, 1.2V, FBGA-96
1,930預期2026/8/19
最少: 1
倍數: 1

SDRAM - DDR4 4 Gbit 16 bit 3.2 GHz FBGA-96 256 M x 16 1.14 V 1.26 V 0 C + 95 C DDR4 Tray
ISSI DRAM 1G, 1.35V, DDR3, 64Mx16, 1600MT/s at 10-10-10, 96 ball BGA (9mm x13mm) RoHS, IT, T&R
4,264在途量
最少: 1
倍數: 1
: 1,500
SDRAM - DDR3L 1 Gbit 16 bit 800 MHz BGA-96 64 M x 16 1.283 V 1.45 V - 40 C + 95 C IS43TR16640CL Reel, Cut Tape
ISSI DRAM 4G, 1.2V, DDR4, 256Mx16, 2666MT/s at 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS
2,324在途量
最少: 1
倍數: 1

SDRAM - DDR4 4 Gbit 16 bit 1.2 GHz BGA-96 256 M x 16 19 ns 1.14 V 1.26 V 0 C + 95 C
ISSI DRAM 8G, 1.2V, DDR4, 512Mx16, 2666MT/s at 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
557在途量
最少: 1
倍數: 1

SDRAM - DDR4 8 Gbit 16 bit BGA-96 512 M x 16 18 ns 1.14 V 1.26 V - 40 C + 95 C
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS
10,746預期2026/9/15
最少: 1
倍數: 1
: 1,000

SDRAM 16 Mbit 16 bit 143 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16100H Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
18,096在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J Tray
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R
11,634在途量
最少: 1
倍數: 1
: 2,500

SDRAM BGA-54 IS42S16160J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
27,144在途量
最少: 1
倍數: 1

SDRAM 16 Mbit 16 bit 143 MHz BGA-54 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R
7,270在途量
最少: 1
倍數: 1
: 2,500

SDRAM 16 Mbit 16 bit 143 MHz BGA-54 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J Reel, Cut Tape, MouseReel
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 ball BGA (8mmx13mm), RoHS, IT
3,050在途量
最少: 1
倍數: 1

SDRAM 512 Mbit 16 bit 167 MHz BGA-54 32 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F Tray
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS
3,456在途量
最少: 1
倍數: 1

SDRAM 512 Mbit 16 bit 143 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S16320F Tray
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
3,456預期2027/7/12
最少: 1
倍數: 1

SDRAM 512 Mbit 16 bit 143 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT, T&R
10,513在途量
最少: 1
倍數: 1
: 1,500

SDRAM 512 Mbit 16 bit 143 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F Reel, Cut Tape, MouseReel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
2,874在途量
最少: 1
倍數: 1

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
17,132在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J Tray
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
11,515在途量
最少: 1
倍數: 1
: 2,500

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS, IT
8,224在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J