離散半導體

結果: 4,054
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品類型 技術 安裝風格 封裝/外殼
STMicroelectronics MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET 155庫存量
最少: 1
倍數: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 997庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220FP-3

STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 540庫存量
600預期2027/1/13
最少: 1
倍數: 1
: 600

IGBTs Si SMD/SMT HU3PAK-7
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 540庫存量
600預期2026/10/23
最少: 1
倍數: 1

IGBTs Si Through Hole TO-247-3
STMicroelectronics MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET 419庫存量
2,000預期2026/10/9
最少: 1
倍數: 1
: 2,000

MOSFETs
STMicroelectronics MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET 399庫存量
3,000預期2026/9/23
最少: 1
倍數: 1
: 3,000

MOSFETs
STMicroelectronics 碳化矽肖特基二極管 650 V, 20A High surge Silicon Carbide power Schottky diode 573庫存量
600在途量
最少: 1
倍數: 1

SiC Schottky Diodes Through Hole DO-247-2
STMicroelectronics 肖特基二極體及整流器 Aerospace 45 V power Schottky rectifier - Engineering model 52庫存量
最少: 1
倍數: 1
Schottky Diodes & Rectifiers Si SMD/SMT LCC-2B
STMicroelectronics 雙極結晶體管 - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model 101庫存量
最少: 1
倍數: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4
STMicroelectronics 雙極結晶體管 - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model 21庫存量
最少: 1
倍數: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4
STMicroelectronics 雙極結晶體管 - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model 13庫存量
最少: 1
倍數: 1
BJTs - Bipolar Transistors Si SMD/SMT SMD.5
STMicroelectronics MOSFET模組 ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A 18庫存量
最少: 1
倍數: 1

MOSFET Modules SiC Press Fit 56.7 mm x 48 mm
STMicroelectronics 可控硅 12 A HiTJ ACST 3,492庫存量
最少: 1
倍數: 1

SCRs


STMicroelectronics IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 515庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 610庫存量
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP247-3
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 540庫存量
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP-247-4


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 448庫存量
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP-247-4


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 256庫存量
600預期2027/8/27
最少: 1
倍數: 1

SiC MOSFETS Through Hole Hip247-4


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 235庫存量
600預期2027/3/12
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP247-3
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 584庫存量
1,000預期2027/5/21
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SMD/SMT H2PAK-7


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 246庫存量
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP-247-4


STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 467庫存量
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP247-4


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 481庫存量
最少: 1
倍數: 1

SiC MOSFETS Through Hole HiP247-4
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,404庫存量
最少: 1
倍數: 1
: 1,800

SiC MOSFETS SMD/SMT TOLL-8
STMicroelectronics ESD 保護二極體 / TVS 二極體 Automotive 5000 W, 22 V TVS 3,823庫存量
最少: 1
倍數: 1
: 2,500