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IMZA65R048M1HXKSA1

Name: Infineon IMZA65R048M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA65R048M1HXKS
Price: 280.84 TWD
Availability: InStock

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Mouser 編號：

726-IMZA65R048M1HXKS

製造商編號：

IMZA65R048M1HXKSA1

製造商：

Infineon Technologies

說明：

碳化矽MOSFET SILICON CARBIDE MOSFET

規格書:

IMZA65R048M1HXKSA1 規格書 (PDF)

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庫存量: 332

庫存：: 332 可立即送貨

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工廠前置作業時間：: 23 週工廠預計生產時間數量大於所顯示的數量。

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單價:

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Pricing (TWD)

數量	單價	總價
	NT$280.84	NT$280.84
	NT$178.16	NT$1,781.60
	NT$152.66	NT$15,266.00
	NT$144.16	NT$69,196.80

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	39 A
Rds On - 漏-源電阻:	64 mOhms
Vgs - 閘極-源極電壓:	- 5 V, + 23 V
Vgs th - 門源門限電壓 :	5.7 V
Qg - 閘極充電:	33 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	125 W
通道模式:	Enhancement
公司名稱:	CoolSiC
品牌:	Infineon Technologies
配置:	Single
下降時間:	13 ns
封裝:	Tube
產品類型:	SiC MOSFETS
上升時間:	12.6 ns
系列:	IMZA65R048
原廠包裝數量:	240
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	17 ns
標準開啟延遲時間:	14.8 ns
零件號別名:	IMZA65R048M1H SP005398433
每件重量:	6 g

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規格書

IMZA65R048M1HXKSA1 規格書 (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

住宅用能源儲存系統 (ESS)

英飛凌住宅用能源儲存系統 (ESS) 提供多樣化的產品，能協助您以最佳化的成本，打造及管理彈性的能源基礎架構。ESS有兩種主要的使用案例。第一種是打造獨立於公用事業、以太陽能供電的住家（住宅用ESS）。第二種則屬於大規模，在高用電需求時用於輔助公用事業的發電（公用事業級的ESS）。

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

碳化矽CoolSiC™ MOSFET和二極體

英飛凌碳化矽CoolSiC™ MOSFET和二極體為能滿足更智慧節能的發電、電力輸送及用電需求的產品組合。CoolSiC產品組合能滿足客戶需求，幫助其縮小系統尺寸，降低中至高功率系統的成本，同時滿足最高的品質標準，延長系統使用壽命，可靠度大受保證。客戶一方面可透過CoolSiC達到最嚴格的效率目標，另一方面則能降低操作系統的成本。產品組合中包括CoolSiC肖特基二極體、CoolSiC混合式模組、CoolSiC MOSFET模組和獨立式裝置，以及用於驅動碳化矽裝置的EiceDRIVER™閘極驅動器IC。

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.