似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

發現錯誤嗎?

IXFA80N25X3

Name: IXYS IXFA80N25X3
Brand: IXYS
SKU: 747-IXFA80N25X3
Price: 358.36 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

747-IXFA80N25X3

製造商編號：

IXFA80N25X3

製造商：

IXYS

說明：

MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET

規格書:

IXFA80N25X3 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於IXYS IXFA80N25X3的資訊

庫存量: 674

庫存：: 674 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 27 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$358.36	NT$358.36
	NT$231.54	NT$2,315.40
	NT$200.94	NT$20,094.00
	NT$191.42	NT$95,710.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
REACH - SVHC:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	TO-263-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	250 V
Id - C連續漏極電流:	80 A
Rds On - 漏-源電阻:	13 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	2.5 V
Qg - 閘極充電:	83 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	390 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
下降時間:	8 ns
互導 - 最小值:	38 S
產品類型:	MOSFETs
上升時間:	17 ns
系列:	X3-Class
原廠包裝數量:	50
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	65 ns
標準開啟延遲時間:	30 ns
每件重量:	4 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

IXFA80N25X3 規格書

此功能需要啟用JavaScript。

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

太陽能逆變器和電池能源儲存系統

Littelfuse太陽能逆變器和電池能源儲存系統 (BESS) 能在AC和DC耦合的太陽能系統中作業。AC耦合太陽能系統有兩個逆變器，更有彈性且更容易安裝。DC耦合太陽能系統有一個逆變器，BESS和PV之間的電纜較短，損耗減少，因此效率更高。Littelfuse太陽能逆變器和BESS元件內含TVS二極體、MOSFET、IGBT驅動器、保險絲、繼電器等。

電動車輛充電解決方案

Littelfuse電動車輛(EV)充電解決方案允許設計人員選擇理想解決方案以確保EV充電單元的功能和安全。非車載EV充電解決站可在極熱、極冷、雨、雪和雷暴天氣的惡劣環境中使用。Littelfuse產品可防護這些危險，盡量減低故障風險。

X3-Class HiPerFET™功率MOSFET

IXYS X3-Class HiPerFET™功率MOSFET是具備N通道強化模式的突崩等級快速固有二極體。這些MOSFET擁有低RDS(ON)、低閘極電荷 (QG) 和高功率密度等特性。IXYS X3-Class HiPerFET™ 200V-300V功率MOSFET可消除高速開關過程中的剩餘能量，以避免裝置故障。裝置的典型應用包括DC-DC轉換器、電源供應器、機器人、伺服控制和輕型電動車的電池充電器。

Heat Pumps

Littelfuse provides a broad portfolio of components for heat pumps, including fuses, TVS diodes, gate drivers, and more. The heat pump market is growing quickly, driven by government initiatives to reduce greenhouse gas emissions and rising energy costs. With inverter-driven motors improving system efficiencies, heat pumps can now be used in a wide range of climates. Learn how Littelfuse technologies make heat pumps safer, more reliable, and more energy efficient. Heat pumps can be used in a wide range of climates due to the inverter-driven motors improving system efficiencies. These components are suitable for various applications such as energy management, security systems, HVAC systems, smoke detectors, and IoT-controlled appliances. Littelfuse offers protect, control, and sense technologies to improve buildings' reliability, safety, and energy efficiency.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.