LF2103NTR

IXYS
747-LF2103NTR
LF2103NTR

製造商:

說明:
閘極驅動器 Half-Bridge DRVR 130mA SOIC(N)-8

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 8,018

庫存:
8,018 可立即送貨
工廠前置作業時間:
17 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™
NT$67.32 NT$67.32
NT$42.84 NT$428.40
NT$38.08 NT$952.00
NT$31.59 NT$3,159.00
NT$27.54 NT$6,885.00
NT$26.08 NT$13,040.00
NT$21.93 NT$21,930.00
完整捲(訂購多個2500)
NT$19.99 NT$49,975.00
NT$19.45 NT$145,875.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
IXYS
產品類型: 閘極驅動器
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
SOIC-8
1 Driver
2 Output
10 V
20 V
70 ns
35 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
品牌: IXYS
邏輯類型: CMOS, TTL
最長斷開延遲時間: 220 ns
最長接通延遲時間: 820 ns
濕度敏感: Yes
運作供電電流: 350 uA
Pd - 功率消耗 : 625 mW
產品類型: Gate Drivers
傳輸延遲 - 最大值: 60 ns
原廠包裝數量: 2500
子類別: PMIC - Power Management ICs
技術: Si
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所選屬性: 0

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CNHTS:
8542399000
USHTS:
8542390090
TARIC:
8542399000
ECCN:
EAR99

LF2103N Half-Bridge Gate Driver

IXYS LF2103N Half-Bridge Gate Driver is a high-voltage, high-speed device capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage technology enables the LF2103N high side to switch to 600V in a bootstrap operation. Compatible with standard TTL and CMOS levels (down to 3.3V), the logic inputs interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross-conduction. The LF2103N has a fixed internal dead time of 420ns (typical). The IXYS LF2103N Half-Bridge Gate Driver is available in a SOIC(N)-8 package and operates over an extended temperature range from -40°C to +125°C.

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Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.