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SCT018H65G3AG

Name: STMicroelectronics SCT018H65G3AG
Brand: STMicroelectronics
SKU: 511-SCT018H65G3AG
Price: 594.03 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

511-SCT018H65G3AG

製造商編號：

SCT018H65G3AG

製造商：

STMicroelectronics

說明：

碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

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規格書:

SCT018H65G3AG 規格書 (PDF)

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庫存量: 45

庫存：: 45

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在途量:: 1,000

預期2027/7/23
工廠前置作業時間：: 21

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個1000）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$594.03	NT$594.03
	NT$419.09	NT$4,190.90
	NT$400.44	NT$40,044.00
	NT$357.07	NT$178,535.00
完整捲（訂購多個1000）
	NT$333.41	NT$333,410.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	H2PAK-7
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	55 A
Rds On - 漏-源電阻:	27 mOhms
Vgs - 閘極-源極電壓:	- 18 V, + 18 V
Vgs th - 門源門限電壓 :	4.2 V
Qg - 閘極充電:	79.4 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	385 W
通道模式:	Enhancement
資格:	AEC-Q101
品牌:	STMicroelectronics
配置:	Single
下降時間:	25 ns
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
產品類型:	SiC MOSFETS
上升時間:	28 ns
原廠包裝數量:	1000
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	56 ns
標準開啟延遲時間:	25 ns

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所選屬性: 0

篩選文檔:

規格書

SCT018H65G3AG 規格書 (PDF)

PCN

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合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.