SCTL35N65G2V

STMicroelectronics
511-SCTL35N65G2V
SCTL35N65G2V

製造商：

說明：
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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庫存量: 2,329

庫存：
2,329 可立即送貨
工廠前置作業時間：
16 週 工廠預計生產時間數量大於所顯示的數量。
數量超過2329會受到最小訂單要求的限制。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™ †
NT$544.68 NT$544.68
NT$384.88 NT$3,848.80
NT$353.94 NT$35,394.00
NT$353.60 NT$176,800.00
NT$353.26 NT$353,260.00
完整捲（訂購多個3000）
NT$289.00 NT$867,000.00
6,000 報價
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
PowerFLAT-5
N-Channel
1 Channel
650 V
40 A
67 mOhms
- 10 V, + 22 V
5 V
73 nC
- 55 C
+ 175 C
417 W
Enhancement
品牌: STMicroelectronics
配置: Single
下降時間: 14 ns
濕度敏感: Yes
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品類型: SiC MOSFETS
上升時間: ns
原廠包裝數量: 3000
子類別: Transistors
技術: SiC
標準斷開延遲時間: 35 ns
標準開啟延遲時間: 16 ns
每件重量: 180 mg
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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