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UF3C065080B3

Name: onsemi UF3C065080B3
Brand: onsemi
SKU: 431-UF3C065080B3
Price: 362.44 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

431-UF3C065080B3

製造商編號：

UF3C065080B3

製造商：

onsemi

說明：

碳化矽MOSFET 650V/80MOSICFETG3TO263-3

壽命週期:

NRND:

不建議用於新設計。

規格書:

UF3C065080B3 規格書

ECAD模型:

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更多資訊

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庫存量: 1,262

庫存：: 1,262 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 22 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個800）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$362.44	NT$362.44
	NT$251.60	NT$2,516.00
	NT$209.78	NT$20,978.00
	NT$209.44	NT$104,720.00
完整捲（訂購多個800）
	NT$195.84	NT$156,672.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	25 A
Rds On - 漏-源電阻:	100 mOhms
Vgs - 閘極-源極電壓:	- 25 V, + 25 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	51 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	115 W
通道模式:	Enhancement
資格:	AEC-Q101
公司名稱:	SiC FET
品牌:	onsemi
配置:	Single
下降時間:	12 ns
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
產品類型:	SiC MOSFETS
上升時間:	13 ns
系列:	UF3C
原廠包裝數量:	800
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	50 ns
標準開啟延遲時間:	25 ns
每件重量:	2.163 g

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篩選文檔:

規格書

UF3C065080B3 規格書

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.