UF3C120080B7S

Name: onsemi UF3C120080B7S
Brand: onsemi
SKU: 431-UF3C120080B7S
Price: 610.98 TWD
Availability: InStock

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Mouser 編號：

431-UF3C120080B7S

製造商編號：

UF3C120080B7S

製造商：

onsemi

說明：

碳化矽MOSFET 1200V/80MOSICFETG3TO263-7

規格書:

UF3C120080B7S 規格書

ECAD模型:

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庫存量: 781

庫存：: 781 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 26 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$610.98	NT$610.98
	NT$434.86	NT$4,348.60
	NT$410.04	NT$41,004.00
完整捲（訂購多個800）
	NT$382.84	NT$306,272.00

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-7
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	28.8 A
Rds On - 漏-源電阻:	85 mOhms
Vgs - 閘極-源極電壓:	- 25 V, + 25 V
Vgs th - 門源門限電壓 :	6 V
Qg - 閘極充電:	23 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	190 W
通道模式:	Enhancement
公司名稱:	SiC FET
品牌:	onsemi
合規:	Done
配置:	Single
下降時間:	9 ns, 8 ns
濕度敏感:	Yes
封裝:	Reel
封裝:	Cut Tape
產品類型:	SiC MOSFETS
上升時間:	7 ns, 6 ns
系列:	UF3C
原廠包裝數量:	800
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	30 ns
標準開啟延遲時間:	31 ns, 33 ns

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規格書

UF3C120080B7S 規格書

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.