SCT018W65G3-4AG

Name: STMicroelectronics SCT018W65G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT018W65G3-4AG
Price: 669.68 TWD
Availability: InStock

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Mouser 編號：

511-SCT018W65G3-4AG

製造商編號：

SCT018W65G3-4AG

製造商：

STMicroelectronics

說明：

碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

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規格書:

SCT018W65G3-4AG 規格書 (PDF)

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庫存量: 465

庫存：: 465 可立即送貨

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工廠前置作業時間：: 32 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$669.68	NT$669.68
	NT$509.79	NT$5,097.90
	NT$424.82	NT$42,482.00
	NT$378.58	NT$227,148.00
	NT$353.84	NT$424,608.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	HiP-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	55 A
Rds On - 漏-源電阻:	27 mOhms
Vgs - 閘極-源極電壓:	- 18 V, + 18 V
Vgs th - 門源門限電壓 :	4.2 V
Qg - 閘極充電:	77 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 200 C
Pd - 功率消耗 :	398 W
通道模式:	Enhancement
資格:	AEC-Q101
品牌:	STMicroelectronics
配置:	Single
下降時間:	29 ns
封裝:	Tube
產品類型:	SiC MOSFETS
上升時間:	13 ns
原廠包裝數量:	600
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	64 ns
標準開啟延遲時間:	24.5 ns

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規格書

SCT018W65G3-4AG 規格書 (PDF)

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合規守則

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

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SCTWA90N65G2Vx 650V Power MOSFETs

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