|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
NT$1,293.11
-
1,073庫存量
-
1,000預期2026/10/15
|
Mouser 元件編號
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,073庫存量
1,000預期2026/10/15
|
|
|
NT$1,293.11
|
|
|
NT$970.82
|
|
|
NT$970.82
|
|
最少： 1
倍數： 1
最大： 10
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
NT$689.75
-
3,317庫存量
|
Mouser 元件編號
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,317庫存量
|
|
|
NT$689.75
|
|
|
NT$491.50
|
|
|
NT$438.09
|
|
|
NT$432.71
|
|
|
NT$409.41
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
NT$933.53
-
710庫存量
|
Mouser 元件編號
726-IMBG120R012M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
710庫存量
|
|
|
NT$933.53
|
|
|
NT$676.85
|
|
|
NT$644.22
|
|
|
NT$629.88
|
|
|
NT$596.19
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
NT$580.05
-
386庫存量
|
Mouser 元件編號
726-IMBG120R022M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
386庫存量
|
|
|
NT$580.05
|
|
|
NT$409.05
|
|
|
NT$350.61
|
|
|
NT$331.61
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
NT$497.24
-
1,673庫存量
|
Mouser 元件編號
726-IMBG120R026M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,673庫存量
|
|
|
NT$497.24
|
|
|
NT$347.75
|
|
|
NT$347.75
|
|
最少： 1
倍數： 1
最大： 60
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
NT$388.26
-
316庫存量
|
Mouser 元件編號
726-IMBG120R040M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316庫存量
|
|
|
NT$388.26
|
|
|
NT$267.80
|
|
|
NT$207.93
|
|
|
NT$196.82
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
NT$281.78
-
841庫存量
|
Mouser 元件編號
726-IMBG120R078M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
841庫存量
|
|
|
NT$281.78
|
|
|
NT$191.08
|
|
|
NT$139.46
|
|
|
NT$136.23
|
|
|
NT$128.70
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
NT$242.70
-
649庫存量
|
Mouser 元件編號
726-IMBG120R116M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
649庫存量
|
|
|
NT$242.70
|
|
|
NT$156.66
|
|
|
NT$117.95
|
|
|
NT$111.49
|
|
|
NT$105.40
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
NT$207.21
-
1,817庫存量
|
Mouser 元件編號
726-IMBG120R181M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,817庫存量
|
|
|
NT$207.21
|
|
|
NT$138.38
|
|
|
NT$98.95
|
|
|
NT$90.34
|
|
|
NT$85.32
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
NT$187.14
-
6,769庫存量
|
Mouser 元件編號
726-IMBG120R234M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6,769庫存量
|
|
|
NT$187.14
|
|
|
NT$124.40
|
|
|
NT$88.55
|
|
|
NT$78.87
|
|
|
NT$78.51
|
|
|
NT$74.21
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
NT$323.37
-
1,968預期2026/7/9
|
Mouser 元件編號
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,968預期2026/7/9
|
|
|
NT$323.37
|
|
|
NT$220.84
|
|
|
NT$163.48
|
|
|
NT$154.51
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
臺灣