CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.

結果: 22
選擇 圖像 零件編號
 製造商
說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
24庫存量
最少： 1
倍數： 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 86 A 25 mOhms -7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
規格書
46庫存量
730預期2026/6/29
最少： 1
倍數： 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
18庫存量
最少： 1
倍數： 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 60 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
25庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 85 A 20 mOhms - 7 V, + 23 V 5.6 V 74 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
255庫存量
最少： 1
倍數： 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 28 A 78 mOhms - 7 V, + 23 V 5.6 V 20 nC - 55 C + 175 C 108 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
規格書
56庫存量
最少： 1
倍數： 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
740庫存量
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 840 V 198 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
202庫存量
最少： 1
倍數： 1
: 750

SMD/SMT HD-SOP-22 N-Channel 1 Channel 750 V 53 A 65.6 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
245庫存量
最少： 1
倍數： 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 72 A 25 mOhms - 7 V, + 23 V 5.6 V 59 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
25庫存量
最少： 1
倍數： 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
11庫存量
240在途量
最少： 1
倍數： 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 47 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 164 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
21庫存量
最少： 1
倍數： 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 32 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 122 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
846庫存量
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C +175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
1,011庫存量
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41 mOhms - 7 V,+ 23 V 5.6 V 79 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
1,025庫存量
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 34 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
687庫存量
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, + 23V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
規格書
750預期2027/5/28
可選用MouseReel
最少： 1
倍數： 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 220 A 9 mOhms - 7 V, + 23 V 5.6 V 164 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
規格書
1,942在途量
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V,+ 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
規格書
50在途量
最少： 1
倍數： 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 357 A 8 mOhms - 7 V, + 23 V 5.6 V 328 nC - 55 C + 175 C 1.499 kW Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
240預期2026/6/29
最少： 1
倍數： 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 172 A 9 mOhms - 11 V, + 25 V 5.6 V 169 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET, 750 V
規格書
240在途量
最少： 1
倍數： 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 116 A 13.8 mOhms - 7 V, + 25 V 5.6 V 106 nC - 55 C + 175 C 333 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Automotive SiC MOSFET 750V G2
規格書
50預期2027/4/26
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 79 A 40 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 282 W Enhancement CoolSiC