NVHL015N065SC1

Name: onsemi NVHL015N065SC1
Brand: onsemi
SKU: 863-NVHL015N065SC1
Price: 1236.24 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

863-NVHL015N065SC1

製造商編號：

NVHL015N065SC1

製造商：

onsemi

說明：

碳化矽MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L

規格書:

NVHL015N065SC1 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於onsemi NVHL015N065SC1的資訊

庫存量: 400

庫存：: 400 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 9 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$1,236.24	NT$1,236.24
	NT$933.98	NT$9,339.80

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
REACH - SVHC:
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	163 A
Rds On - 漏-源電阻:	12 mOhms
Vgs - 閘極-源極電壓:	- 8 V, + 22 V
Vgs th - 門源門限電壓 :	4.3 V
Qg - 閘極充電:	283 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	643 W
通道模式:	Enhancement
公司名稱:	EliteSiC
品牌:	onsemi
配置:	Single
下降時間:	11 ns
互導 - 最小值:	44 S
封裝:	Tube
產品類型:	SiC MOSFETS
上升時間:	77 ns
系列:	NVHL015N065SC1
原廠包裝數量:	30
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	47 ns
標準開啟延遲時間:	25 ns

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

NVHL015N065SC1 規格書

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NVHL015N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NVHL015N065SC1 Silicon Carbide (SiC) MOSFET employs new technology that provides superior switching performance and high reliability. This SiC MOSFET features n-channel, high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The NVHL015N065SC1 MOSFET offers low ON resistance and compact chip size, which ensures low capacitance and gate charge. This EliteSiC MOSFET is 100% UIL tested and AEC−Q101 qualified. The NVHL015N065SC1 MOSFET features 650V drain−to−source voltage and 12mohm resistance. Typical applications include automotive traction inverters, DC/DC converters for EV/HEV, and onboard chargers.