|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
NT$789.48
-
664庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
664庫存量
|
|
|
NT$789.48
|
|
|
NT$646.00
|
|
|
NT$570.52
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
NT$614.04
-
706庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R017M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
706庫存量
|
|
|
NT$614.04
|
|
|
NT$491.64
|
|
|
NT$425.00
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
NT$449.82
-
683庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R026M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
683庫存量
|
|
|
NT$449.82
|
|
|
NT$335.92
|
|
|
NT$290.36
|
|
|
NT$275.06
|
|
|
NT$233.58
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
NT$377.40
-
959庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R034M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
959庫存量
|
|
|
NT$377.40
|
|
|
NT$295.12
|
|
|
NT$245.82
|
|
|
NT$219.30
|
|
|
NT$185.98
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
NT$352.92
-
967庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R040M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
967庫存量
|
|
|
NT$352.92
|
|
|
NT$276.08
|
|
|
NT$230.18
|
|
|
NT$205.02
|
|
|
NT$182.58
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
NT$312.46
-
858庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R053M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
858庫存量
|
|
|
NT$312.46
|
|
|
NT$232.56
|
|
|
NT$193.80
|
|
|
NT$172.72
|
|
|
NT$153.68
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
NT$271.32
-
556庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R078M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
556庫存量
|
|
|
NT$271.32
|
|
|
NT$191.42
|
|
|
NT$159.46
|
|
|
NT$142.12
|
|
|
NT$126.48
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
NT$523.94
-
13庫存量
-
1,680在途量
-
新產品
|
Mouser 元件編號
726-IMZC120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
13庫存量
1,680在途量
在途量:
1,200 預期2026/4/23
480 預期2026/4/30
|
|
|
NT$523.94
|
|
|
NT$405.62
|
|
|
NT$350.54
|
|
|
NT$350.20
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
臺灣