SCT4018KRC15

Name: ROHM Semiconductor SCT4018KRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4018KRC15
Price: 1205.64 TWD
Availability: InStock

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Mouser 編號：

755-SCT4018KRC15

製造商編號：

SCT4018KRC15

製造商：

ROHM Semiconductor

說明：

碳化矽MOSFET TO247 1.2KV 81A N-CH SIC

規格書:

SCT4018KRC15 規格書

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庫存量: 6

庫存：: 6

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在途量:: 450

預期2026/6/18
工廠前置作業時間：: 27

週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$1,205.64	NT$1,205.64
	NT$897.60	NT$8,976.00
	NT$897.26	NT$403,767.00

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商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	81 A
Rds On - 漏-源電阻:	23.4 mOhms
Vgs - 閘極-源極電壓:	- 4 V, + 21 V
Vgs th - 門源門限電壓 :	4.8 V
Qg - 閘極充電:	170 nC
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	312 W
通道模式:	Enhancement
品牌:	ROHM Semiconductor
配置:	Single
下降時間:	11 ns
互導 - 最小值:	22 S
封裝:	Tube
產品:	MOSFET's
產品類型:	SiC MOSFETS
上升時間:	21 ns
原廠包裝數量:	450
子類別:	Transistors
技術:	SiC
晶體管類型:	1 N-Channel
標準斷開延遲時間:	50 ns
標準開啟延遲時間:	13 ns
零件號別名:	SCT4018KR

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規格書

SCT4018KRC15 規格書

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4018KR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4018KR N-Channel Silicon Carbide (SiC) Power MOSFET is a robust device optimized for high-efficiency power conversion in demanding applications. With a drain-source voltage rating of 1200V and a continuous drain current of 81A (at +25°C), the ROHM SCT4018KR delivers excellent performance in high-voltage environments. The device features a low typical on-resistance of 18mΩ and supports fast switching speeds, which significantly reduce switching losses and improve overall system efficiency. Housed in a TO-247-4L package, the SCT4018KR is well-suited for use in industrial power supplies, solar inverters, and motor drives. Leveraging the advantages of SiC technology, the SCT4018KR MOSFET offers superior thermal conductivity, high-temperature operation, and enhanced reliability, making it ideal for compact, high-performance power systems.