NVBG070N120M3S

Name: onsemi NVBG070N120M3S
Brand: onsemi
SKU: 863-NVBG070N120M3S
Price: 523.26 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

863-NVBG070N120M3S

製造商編號：

NVBG070N120M3S

製造商：

onsemi

說明：

碳化矽MOSFET SIC MOS D2PAK-7L 70MOHM 1200V M3

規格書:

NVBG070N120M3S 規格書

ECAD模型:

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庫存量: 1,569

庫存：: 1,569 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 19 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$523.26	NT$523.26
	NT$369.24	NT$3,692.40
	NT$335.92	NT$33,592.00
完整捲（訂購多個800）
	NT$335.58	NT$268,464.00

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
REACH - SVHC:
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-7
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	25 A
Rds On - 漏-源電阻:	87 mOhms
Vgs - 閘極-源極電壓:	- 10 V, + 22 V
Vgs th - 門源門限電壓 :	4.4 V
Qg - 閘極充電:	57 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	172 W
通道模式:	Enhancement
公司名稱:	EliteSiC
品牌:	onsemi
配置:	Single
下降時間:	8.8 ns
互導 - 最小值:	12 S
封裝:	Reel
封裝:	Cut Tape
產品類型:	SiC MOSFETS
上升時間:	12 ns
系列:	NVBG070N120M3S
原廠包裝數量:	800
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	30 ns
標準開啟延遲時間:	11 ns

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篩選文檔:

規格書

NVBG070N120M3S 規格書

PCN

Product Change Notification 2025-9-26 (PDF)

CNHTS:: 8541290000
ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NVBG070N120M3S Silicon Carbide (SiC) MOSFET

onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET designed for fast switching applications. This MOSFET offers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The NVBG070N120M3S SiC MOSFET features a 57nC ultra-low gate charge, 57pF high-speed switching with low capacitance, and 65mΩ typical drain-to-source ON resistance at V_GS=18V. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG070N120M3S SiC MOSFET is available in a D2PAK-7L package and is Lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.