NVHL075N065SC1

onsemi
863-NVHL075N065SC1
NVHL075N065SC1

製造商:

說明:
碳化矽MOSFET SIC MOS TO247-3L 650V 75MOHM

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 366

庫存:
366 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$427.72 NT$427.72
NT$276.42 NT$2,764.20
NT$270.30 NT$32,436.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
38 A
85 mOhms
- 5 V, + 18 V
4.3 V
61 nC
- 55 C
+ 175 C
74 W
Enhancement
EliteSiC
品牌: onsemi
下降時間: 8 ns
互導 - 最小值: 9 S
封裝: Tube
產品: Mosfets
產品類型: SiC MOSFETS
上升時間: 26 ns
系列: NVHL075N065SC1
原廠包裝數量: 30
子類別: Transistors
技術: SiC
標準斷開延遲時間: 22 ns
標準開啟延遲時間: 10 ns
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs are high-performance devices with exceptional characteristics. The onsemi NVHL075N065SC1 offers a typical RDS(on) of 57mΩ at a gate-source voltage (VGS) of 18V and 75mΩ at 15V. The device features ultra-low gate charge (QG(tot) = 61nC) and low output capacitance (Coss = 107pF), ensuring fast switching and reduced power losses.