結果: 47
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET HIGH POWER_NEW 1,342庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 A 105 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 150 C 140 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 831庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 70 mOhms - 20 V, 20 V 4.5 V 67 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,967庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 4.5 V 79 nC - 55 C + 150 C 178 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 3,488庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 783庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,523庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 44 A 55 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 150 C 236 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 3,261庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,989庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 25 A 95 mOhms - 20 V, 20 V 3.5 V 51 nC - 40 C + 150 C 147 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 2,000庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 33 A 75 mOhms - 20 V, 20 V 4 V 51 nC - 55 C + 150 C 188 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 388庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 77 A 24 mOhms - 20 V, 20 V 4 V 183 nC - 55 C + 150 C 320 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 268庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 984庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 3,364庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 14 A 153 mOhms - 20 V, 20 V 3.5 V 28 nC - 40 C + 150 C 85 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 316庫存量
最少: 1
倍數: 1

Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms - 20 V, 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,189庫存量
500預期2026/5/4
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 967庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 4.5 V 42 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 3,806庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 76 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 717庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 28 A 90 mOhms - 20 V, 20 V 4 V 42 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 533庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 3.5 V 79 nC - 55 C + 150 C 178 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 230庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,450庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 4 V 107 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 825庫存量
3,000預期2026/6/11
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 40 A 60 mOhms - 20 V, 20 V 3.5 V 79 nC - 40 C + 150 C 219 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,784庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms - 20 V, 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,012庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 600庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 52 A 45 mOhms - 20 V, 20 V 4 V 79 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel