結果: 41
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET HIGH POWER_NEW 5,894庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 85 mOhms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 137 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 917庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 39 A 73 mOhms - 20 V, 20 V 3 V 51 nC - 40 C + 150 C 154 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 862庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 31,840庫存量
7,200在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 14,435庫存量
6,500預期2026/8/20
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,323庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,684庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,531庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,235庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 6,345庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 897庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 6,257庫存量
最少: 1
倍數: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 10,724庫存量
4,691預期2026/4/24
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 961庫存量
3,000預期2026/5/4
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms - 20 V, 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 4,754庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 27 A 104 mOhms - 20 V, 20 V 3 V 36 nC - 40 C + 150 C 111 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 4,495庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 19 A 149 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 81 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 680庫存量
7,000在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 851庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 5,713庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 547庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 101 A 24 mOhms - 20 V, 20 V 3.5 V 164 nC - 55 C + 150 C 291 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 906庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 976庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 366庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 374 mOhms - 20 V, 20 V 4 V 44 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 783庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 340 mOhms - 20 V, 20 V 3.5 V 25 nC - 40 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 470庫存量
8,000預期2026/5/4
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape