NTBG025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.