StrongIRFET™ 2功率MOSFET

英飛凌科技StrongIRFET™ 2功率MOSFET是N通道、標準電位且經過100%突崩測試的MOSFET。英飛凌StrongIRFET 2 MOSFET針對廣泛的應用最佳化。MOSFET提供80V至100V的VDS範圍和2.4 mΩ至8.2 mΩ的RDS(on)。

結果: 74
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET IFX FET 60V 1,302庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 194 A 1.6 mOhms - 20 V, 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 959庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 139 A 4.25 mOhms - 20 V, 20 V 2.2 V 57 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,089庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 117 A 5.05 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFET N-CH 40V 240A D2PAK-7 5,997庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 240 A 1 mOhms - 20 V, 20 V 3 V 210 nC - 55 C + 150 C 245 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 1,401庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 98 A 5.5 mOhms - 20 V, 20 V 2.2 V 36 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 768庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 126 A 3.9 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 659庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 107 A 4 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,224庫存量
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 5 mOhms - 20 V, 20 V 3.8 V 51 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 505庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 259 A 1.7 mOhms - 20 V, 20 V 2.2 V 124 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 636庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 122 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 624庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 125 A 1.8 mOhms - 20 V, 20 V 2.35 V 46 nC - 55 C + 175 C 167 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 399庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 119 A 2.35 mOhms - 20 V, 20 V 2.35 V 24 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 3,890庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 137 A 2.35 mOhms - 20 V, 20 V 2.35 V 24 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IR FET UP TO 60V 3,908庫存量
最少: 1
倍數: 1

Si Through Hole N-Channel 1 Channel 30 V 121 A 2.35 mOhms - 20 V, 20 V 2.35 V 50 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 3,850庫存量
最少: 1
倍數: 1

Si Through Hole N-Channel 1 Channel 30 V 78 A 3.3 mOhms - 20 V, 20 V 2.35 V 3 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 873庫存量
1,800預期2026/4/2
最少: 1
倍數: 1
: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 315 A 1.5 mOhms - 20 V, 20 V 2.2 V 161 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 3,702庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 120 A 3.85 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 1,622庫存量
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 201 A 1.15 mOhms - 20 V, 20 V 3.4 V 210 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 1,714庫存量
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 193 A 1.5 mOhms - 20 V, 20 V 3.4 V 106 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 2,068庫存量
最少: 1
倍數: 1
: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 351 A 1.23 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 2,280庫存量
最少: 1
倍數: 1
: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 294 A 1.75 mOhms - 20 V, 20 V 2.2 V 130 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,735庫存量
最少: 1
倍數: 1
: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 236 A 2.25 mOhms - 20 V, 20 V 2.2 V 103 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 4,886庫存量
4,000預期2026/3/26
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 185 A 1.9 mOhms - 20 V, 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 1,294庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 143 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 3,736庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 99 A 3.05 mOhms - 20 V, 20 V 2.35 V 16 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Reel, Cut Tape