IMZA65R083M1HXKSA1

Infineon Technologies
726-IMZA65R083M1HXKS
IMZA65R083M1HXKSA1

製造商：

說明：
碳化矽MOSFET SILICON CARBIDE MOSFET

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庫存：
暫無庫存
工廠前置作業時間：
26 週 工廠預計生產時間。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$235.62 NT$235.62
NT$180.54 NT$1,805.40
NT$113.56 NT$11,356.00
NT$104.04 NT$49,939.20

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
26 A
111 mOhms
- 5 V, + 23 V
5.7 V
19 nC
- 55 C
+ 175 C
104 W
Enhancement
品牌: Infineon Technologies
封裝: Tube
產品類型: SiC MOSFETS
原廠包裝數量: 240
子類別: Transistors
技術: SiC
零件號別名: IMZA65R083M1H SP005423798
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

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