SCT4062KWAHRTL

Name: ROHM Semiconductor SCT4062KWAHRTL
Brand: ROHM Semiconductor
SKU: 755-SCT4062KWAHRTL
Price: 385.9 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

755-SCT4062KWAHRTL

製造商編號：

SCT4062KWAHRTL

製造商：

ROHM Semiconductor

說明：

碳化矽MOSFET TO263 1.2KV 24A N-CH SIC

規格書:

SCT4062KWAHRTL 規格書

ECAD模型:

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庫存量: 1,488

庫存：: 1,488 可立即送貨

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工廠前置作業時間：: 27 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個1000）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$385.90	NT$385.90
	NT$273.70	NT$2,737.00
	NT$232.56	NT$23,256.00
完整捲（訂購多個1000）
	NT$197.20	NT$197,200.00
	NT$190.74	NT$381,480.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	TO-263-7LA
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	24 A
Rds On - 漏-源電阻:	81 mOhms
Vgs - 閘極-源極電壓:	- 4 V, + 21 V
Vgs th - 門源門限電壓 :	4.8 V
Qg - 閘極充電:	64 nC
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	93 W
通道模式:	Enhancement
品牌:	ROHM Semiconductor
配置:	Single
下降時間:	10 ns
互導 - 最小值:	6.5 S
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
產品:	MOSFET's
產品類型:	SiC MOSFETS
上升時間:	11 ns
原廠包裝數量:	1000
子類別:	Transistors
技術:	SiC
晶體管類型:	1 N-Channel
標準斷開延遲時間:	22 ns
標準開啟延遲時間:	4.4 ns

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所選屬性: 0

篩選文檔:

規格書

SCT4062KWAHRTL 規格書

Specification Sheets

Datasheet - Chinese (English language)

此功能需要啟用JavaScript。

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCT4062KWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4062KWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance, automotive-grade device for use in demanding automotive environments. The ROHM SCT4062KWAHR features a high drain-source voltage rating of 1200V and a continuous drain current of 24A (at +25°C), making the MOSFET well-suited for high-voltage, high-efficiency power conversion systems. With a typical on-resistance of 62mΩ, the SCT4062KWAHR minimizes conduction losses and supports fast switching, which contributes to reduced power loss and improved thermal performance. Packaged in a TO-263-7LA format, the device offers excellent heat dissipation and ease of integration into compact power modules. SCT4062KWAHR is ideal for electric vehicle (EV) applications such as traction inverters, onboard chargers, and DC-DC converters, where reliability, efficiency, and thermal stability are critical.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.