Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

電晶體的類型

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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品類型 技術 安裝風格 封裝/外殼 晶體管極性
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 252庫存量
600預期2026/11/16
最少: 1
倍數: 1
: 600

SiC MOSFETS
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 969庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x 2,681庫存量
最少: 1
倍數: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2,329庫存量
最少: 1
倍數: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 922庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package 274庫存量
600預期2026/3/9
最少: 1
倍數: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 739庫存量
最少: 1
倍數: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 513庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel

STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 502庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 1,082庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package 1,011庫存量
600預期2027/1/4
最少: 1
倍數: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 547庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 641庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,779庫存量
最少: 1
倍數: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package 14庫存量
2,000預期2026/10/12
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 37庫存量
最少: 1
倍數: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 160庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 202庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 532庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 353庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 698庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 629庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 473庫存量
1,200預期2026/4/20
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A 142庫存量
最少: 1
倍數: 1
: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A 57庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel