NVH4L015N065SC1

onsemi
863-NVH4L015N065SC1
NVH4L015N065SC1

製造商:

說明:
碳化矽MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-4L

ECAD模型:
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庫存量: 384

庫存:
384 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$1,072.02 NT$1,072.02
NT$957.44 NT$9,574.40

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
TO-247-4
EliteSiC
品牌: onsemi
封裝: Tube
產品類型: SiC MOSFETS
系列: NVH4L015N065SC1
原廠包裝數量: 30
子類別: Transistors
技術: SiC
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

將閘極驅動器與EliteSiC MOSFET搭配使用

電動車充電、能源儲存、不斷電系統 (UPS) 和太陽能等能源基礎設施應用正在將系統功率推至數百千瓦,甚至兆瓦等級。這些高功率應用採用半橋、全橋和三相拓撲,為逆變器和BLDC提供多達6個開關的工作週期。視功率等級和開關速度而定,系統設計人員需要包括矽、IGBT和SiC等各種不同的開關技術來滿足其應用要求。

NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L015N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.