Qorvo QPA261x X-Band Power Amplifiers are high-performance amplifiers fabricated with 0.15µm GaN on SiC process (QGaN15). These power amplifiers support tight lattice spacing requirements for phased array radar applications. The QPA261x amplifiers feature RF input and output ports that are matched to 50Ω and include integrated DC blocking capacitors. These power amplifiers are stored at -55°C to +150°C. The Qorvo QPA261x amplifiers operate at -4V to 0V maximum gate voltage range. These power amplifiers are ideal for use in radar, communication, and Satcom.
