|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
NT$940.78
-
714庫存量
|
Mouser 元件編號
511-SCTW70N120G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714庫存量
|
|
|
NT$940.78
|
|
|
NT$711.62
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
NT$660.62
-
47庫存量
-
600預期2026/4/20
|
Mouser 元件編號
511-SCTW90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
47庫存量
600預期2026/4/20
|
|
|
NT$660.62
|
|
|
NT$620.50
|
|
|
NT$592.96
|
|
|
NT$586.84
|
|
|
檢視
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
NT$301.92
-
592庫存量
|
Mouser 元件編號
511-SCT1000N170
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592庫存量
|
|
|
NT$301.92
|
|
|
NT$206.72
|
|
|
NT$152.66
|
|
|
NT$133.96
|
|
|
NT$133.62
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
NT$540.60
-
510庫存量
|
Mouser 元件編號
511-SCT20N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510庫存量
|
|
|
NT$540.60
|
|
|
NT$398.82
|
|
|
NT$277.78
|
|
|
檢視
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
NT$584.80
-
593庫存量
|
Mouser 元件編號
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593庫存量
|
|
|
NT$584.80
|
|
|
NT$362.78
|
|
|
NT$316.88
|
|
|
NT$316.54
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
NT$871.42
-
317庫存量
-
NRND
|
Mouser 元件編號
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317庫存量
|
|
|
NT$871.42
|
|
|
NT$773.16
|
|
|
NT$765.00
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
NT$982.26
-
151庫存量
|
Mouser 元件編號
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151庫存量
|
|
|
NT$982.26
|
|
|
NT$748.68
|
|
|
NT$691.22
|
|
|
NT$597.04
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
NT$312.12
-
844預期2026/11/23
|
Mouser 元件編號
511-SCT10N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844預期2026/11/23
|
|
|
NT$312.12
|
|
|
NT$176.80
|
|
|
NT$140.42
|
|
|
NT$140.08
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
NT$959.82
-
69預期2026/3/16
|
Mouser 元件編號
511-SCTWA90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69預期2026/3/16
|
|
|
NT$959.82
|
|
|
NT$621.86
|
|
|
NT$595.00
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
- SCT018W65G3AG
- STMicroelectronics
-
600:
NT$358.02
-
無庫存前置作業時間 17 週
-
新產品
|
Mouser 元件編號
511-SCT018W65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
|
|
無庫存前置作業時間 17 週
|
|
最少： 600
倍數： 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
76 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3
- STMicroelectronics
-
600:
NT$439.62
-
暫無庫存
-
新產品
|
Mouser 元件編號
511-SCT040W120G3
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
暫無庫存
|
|
|
NT$439.62
|
|
|
報價
|
|
|
報價
|
|
最少： 600
倍數： 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
-10 V, 22 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
臺灣
