QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

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結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品類型 技術 安裝風格 封裝/外殼
Qorvo RF雙極結體管 DC-6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor 100庫存量
最少: 1
倍數: 1
: 100

RF Bipolar Transistors GaN Si SMD/SMT QFN-20
Qorvo 氮化鎵場效應管 DC-6GHz 35W 50V GaN Transistor 無庫存前置作業時間 16 週
最少: 500
倍數: 500
: 500

GaN FETs GaN SMD/SMT QFN-20