|
|
氮化鎵場效應管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
- SGT070R70HTO
- STMicroelectronics
-
1:
NT$279.63
-
356庫存量
-
新產品
|
Mouser 元件編號
511-SGT070R70HTO
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
|
|
356庫存量
|
|
|
NT$279.63
|
|
|
NT$200.40
|
|
|
NT$174.95
|
|
|
NT$169.93
|
|
|
NT$162.40
|
|
最少: 1
倍數: 1
:
1,800
|
|
|
SMD/SMT
|
TO-LL-11
|
|
|
700 V
|
26 A
|
70 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
231 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
NT$60.59
-
675庫存量
-
新產品
|
Mouser 元件編號
511-SGT350R70GTK
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
675庫存量
|
|
|
NT$60.59
|
|
|
NT$40.51
|
|
|
NT$33.84
|
|
|
NT$32.55
|
|
|
NT$30.36
|
|
|
檢視
|
|
|
NT$31.51
|
|
|
NT$29.36
|
|
最少: 1
倍數: 1
:
2,500
|
|
|
SMD/SMT
|
DPAK-3
|
|
|
700 V
|
6 A
|
350 mOhms
|
- 1.4 V, + 7 V
|
2.5 V
|
1.5 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
NT$178.53
-
1,000預期2026/5/4
-
新產品
|
Mouser 元件編號
511-SGT080R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
1,000預期2026/5/4
|
|
|
NT$178.53
|
|
|
NT$125.48
|
|
|
NT$108.27
|
|
|
NT$105.04
|
|
|
NT$102.17
|
|
|
NT$98.59
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
29 A
|
80 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
188 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
- SGT105R70ILB
- STMicroelectronics
-
1:
NT$230.52
-
1,000預期2026/5/4
-
新產品
|
Mouser 元件編號
511-SGT105R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
|
|
1,000預期2026/5/4
|
|
|
NT$230.52
|
|
|
NT$161.68
|
|
|
NT$120.46
|
|
|
NT$115.44
|
|
|
NT$97.87
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
21.7 A
|
105 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
4.8 nC
|
- 55 C
|
+ 150 C
|
158 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
- SGT140R70ILB
- STMicroelectronics
-
1:
NT$173.87
-
1,000預期2026/4/27
-
新產品
|
Mouser 元件編號
511-SGT140R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
|
|
1,000預期2026/4/27
|
|
|
NT$173.87
|
|
|
NT$121.53
|
|
|
NT$93.93
|
|
|
NT$89.63
|
|
|
NT$76.00
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
17 A
|
140 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.5 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
- SGT190R70ILB
- STMicroelectronics
-
1:
NT$138.38
-
1,000預期2026/4/22
-
新產品
|
Mouser 元件編號
511-SGT190R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
|
|
1,000預期2026/4/22
|
|
|
NT$138.38
|
|
|
NT$96.80
|
|
|
NT$74.93
|
|
|
NT$69.91
|
|
|
NT$59.15
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
11.5 A
|
190 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
- SGT240R70ILB
- STMicroelectronics
-
1:
NT$135.51
-
1,000預期2026/4/28
-
新產品
|
Mouser 元件編號
511-SGT240R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
|
|
1,000預期2026/4/28
|
|
|
NT$135.51
|
|
|
NT$93.93
|
|
|
NT$73.13
|
|
|
NT$68.12
|
|
|
NT$57.36
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
10 A
|
240 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
- SGT65R65AL
- STMicroelectronics
-
3,000:
NT$169.21
-
無庫存前置作業時間 52 週
|
Mouser 元件編號
511-SGT65R65AL
|
STMicroelectronics
|
氮化鎵場效應管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
|
|
無庫存前置作業時間 52 週
|
|
最少: 3,000
倍數: 3,000
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
25 A
|
65 mOhms
|
+ 6 V
|
1.8 V
|
5.4 nC
|
- 55 C
|
+ 150 C
|
305 W
|
|
|