TK100A10N1,S4X
影像僅供參考
請參閱產品規格
請參閱產品規格
757-TK100A10N1S4X
TK100A10N1,S4X
製造商：
說明：
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
庫存量: 141
-
庫存：
-
141 可立即送貨發生意外錯誤了。請稍後再試。
-
工廠前置作業時間：
-
20 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (TWD)
| 數量 | 單價 |
總價
|
|---|---|---|
| NT$190.74 | NT$190.74 | |
| NT$100.64 | NT$1,006.40 | |
| NT$93.84 | NT$9,384.00 | |
| NT$76.16 | NT$38,080.00 | |
| NT$75.48 | NT$75,480.00 |
規格書
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
