|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
NT$425.68
-
57庫存量
|
Mouser 元件編號
511-SCT055W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57庫存量
|
|
|
NT$425.68
|
|
|
NT$346.46
|
|
|
NT$288.66
|
|
|
NT$210.12
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
NT$413.78
-
85庫存量
|
Mouser 元件編號
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85庫存量
|
|
|
NT$413.78
|
|
|
NT$289.68
|
|
|
NT$249.22
|
|
|
NT$248.88
|
|
|
NT$203.32
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
NT$464.10
-
73庫存量
-
1,200預期2026/3/16
|
Mouser 元件編號
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73庫存量
1,200預期2026/3/16
|
|
|
NT$464.10
|
|
|
NT$325.04
|
|
|
NT$287.64
|
|
|
NT$234.60
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
NT$301.92
-
592庫存量
|
Mouser 元件編號
511-SCT1000N170
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592庫存量
|
|
|
NT$301.92
|
|
|
NT$206.72
|
|
|
NT$152.66
|
|
|
NT$133.96
|
|
|
NT$133.62
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
NT$540.60
-
510庫存量
|
Mouser 元件編號
511-SCT20N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510庫存量
|
|
|
NT$540.60
|
|
|
NT$398.82
|
|
|
NT$277.78
|
|
|
檢視
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
NT$991.44
-
1,597庫存量
|
Mouser 元件編號
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597庫存量
|
|
|
NT$991.44
|
|
|
NT$758.54
|
|
|
NT$619.48
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
NT$584.80
-
593庫存量
|
Mouser 元件編號
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593庫存量
|
|
|
NT$584.80
|
|
|
NT$362.78
|
|
|
NT$316.88
|
|
|
NT$316.54
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
NT$871.42
-
317庫存量
-
NRND
|
Mouser 元件編號
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317庫存量
|
|
|
NT$871.42
|
|
|
NT$773.16
|
|
|
NT$765.00
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
NT$597.04
-
90庫存量
|
Mouser 元件編號
511-SCTWA40N12G24AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90庫存量
|
|
|
NT$597.04
|
|
|
NT$424.32
|
|
|
NT$327.08
|
|
|
NT$325.04
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
NT$583.44
-
9庫存量
-
2,000預期2026/10/12
-
新產品
|
Mouser 元件編號
511-SCT025H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9庫存量
2,000預期2026/10/12
|
|
|
NT$583.44
|
|
|
NT$414.12
|
|
|
NT$386.58
|
|
|
NT$315.52
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
NT$982.26
-
151庫存量
|
Mouser 元件編號
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151庫存量
|
|
|
NT$982.26
|
|
|
NT$748.68
|
|
|
NT$691.22
|
|
|
NT$597.04
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
NT$1,003.34
-
28庫存量
|
Mouser 元件編號
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28庫存量
|
|
|
NT$1,003.34
|
|
|
NT$719.10
|
|
|
NT$703.80
|
|
|
檢視
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
NT$823.82
-
600預期2026/7/27
|
Mouser 元件編號
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600預期2026/7/27
|
|
|
NT$823.82
|
|
|
NT$674.22
|
|
|
NT$595.34
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
NT$617.78
-
1,200在途量
|
Mouser 元件編號
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200在途量
在途量:
600 預期2026/5/1
600 預期2026/9/14
|
|
|
NT$617.78
|
|
|
NT$494.70
|
|
|
NT$427.72
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
NT$459.34
-
400預期2026/12/21
-
新產品
|
Mouser 元件編號
511-SCT027HU65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
400預期2026/12/21
|
|
|
NT$459.34
|
|
|
NT$342.72
|
|
|
NT$296.48
|
|
|
NT$280.84
|
|
|
NT$238.34
|
|
最少： 1
倍數： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
NT$431.12
-
996預期2026/4/22
|
Mouser 元件編號
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996預期2026/4/22
|
|
|
NT$431.12
|
|
|
NT$302.26
|
|
|
NT$262.82
|
|
|
NT$262.48
|
|
|
NT$214.54
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
NT$425.34
-
1,113預期2026/3/10
|
Mouser 元件編號
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113預期2026/3/10
|
|
|
NT$425.34
|
|
|
NT$299.88
|
|
|
NT$260.10
|
|
|
NT$212.50
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
NT$312.12
-
844預期2026/10/26
|
Mouser 元件編號
511-SCT10N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844預期2026/10/26
|
|
|
NT$312.12
|
|
|
NT$176.80
|
|
|
NT$140.42
|
|
|
NT$140.08
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
NT$570.52
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT025H120G3-7
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100在途量
|
|
|
NT$570.52
|
|
|
NT$441.32
|
|
|
NT$381.48
|
|
|
NT$381.48
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
NT$386.92
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT040W120G3-4
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100在途量
|
|
|
NT$386.92
|
|
|
NT$315.18
|
|
|
NT$262.48
|
|
|
NT$233.92
|
|
|
NT$198.56
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
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1:
NT$959.82
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69預期2026/3/16
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Mouser 元件編號
511-SCTWA90N65G2V
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STMicroelectronics
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碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
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69預期2026/3/16
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|
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NT$959.82
|
|
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NT$621.86
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NT$595.00
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報價
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報價
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最少： 1
倍數： 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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650 V
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119 A
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24 mOhms
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- 10 V, + 22 V
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5 V
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157 nC
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- 55 C
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+ 200 C
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565 W
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Enhancement
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碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1,000:
NT$550.80
-
無庫存前置作業時間 16 週
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新產品
|
Mouser 元件編號
511-SCT011H75G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
無庫存前置作業時間 16 週
|
|
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NT$550.80
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檢視
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報價
|
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最少： 1,000
倍數： 1,000
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碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
-
600:
NT$481.10
-
無庫存前置作業時間 18 週
-
新產品
|
Mouser 元件編號
511-SCT014HU65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
|
|
無庫存前置作業時間 18 週
|
|
|
NT$481.10
|
|
|
報價
|
|
|
報價
|
|
最少： 600
倍數： 600
|
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碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
-
1,800:
NT$373.32
-
無庫存前置作業時間 19 週
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新產品
|
Mouser 元件編號
511-SCT014TO65G3
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
|
|
無庫存前置作業時間 19 週
|
|
最少： 1,800
倍數： 1,800
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碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1,000:
NT$334.90
-
無庫存前置作業時間 16 週
-
新產品
|
Mouser 元件編號
511-SCT018H65G3-7
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
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無庫存前置作業時間 16 週
|
|
最少： 1,000
倍數： 1,000
|
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SMD/SMT
|
H2PAK-7
|
N-Channel
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1 Channel
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650 V
|
55 A
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27 mOhms
|
-10 V, 22 V
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4.2 V
|
79.4 nC
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- 55 C
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+ 175 C
|
385 W
|
Enhancement
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臺灣