CL8068403359116S R3YX

Intel
607-68403359116SR3YX
CL8068403359116S R3YX

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說明:
CPU - 中央處理器 Intel Xeon E-2176M Processor (12M Cache, up to 4.40 GHz) FC-BGA14F, Tray

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單價:
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Pricing (TWD)

數量 單價
總價
NT$23,594.30 NT$23,594.30
NT$20,735.24 NT$207,352.40

商品屬性 屬性值 選擇屬性
Intel
產品類型: CPU - 中央處理器
RoHS:  
Mobile Processors
Intel Xeon
64 bit
6 Core
FCBGA-1440
2.7 GHz
12 MB
12 Thread
45 W
64 GB
DDR4-2666, LPDDR3-2133
8 GT/s
DMI
Intel Xeon
Coffee Lake
E-2176M
Embedded
+ 100 C
Tray
品牌: Intel
CPU 配置 - 最高: 1 Configuration
支援 ECC 記憶體: Supported
Intel 超執行緒技術: With HT Technology
Intel 虛擬化技術 - VT: With VT
微影 - 處理技術: 14 nm
濕度敏感: Yes
安裝風格: SMD/SMT
支援顯示器數目: 3 Display
記憶體通道數目: 2 Channel
PCI 快速通道數目: 16 Lane
PCIe 配置: 1x16, 2x8, 1x8 + 2x4
PCIe 修訂: Revision 3.0
產品類型: CPU - Central Processing Units
系列: E-2176M
原廠包裝數量: 1
子類別: Embedded Processors & Controllers
公司名稱: Xeon
超頻 - 最高: 4.4 GHz
零件號別名: 963717
每件重量: 123.145 g
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USHTS:
8542310045
TARIC:
8542319000
ECCN:
5A992.C

4th Generation Xeon® Processors

Intel 4th Generation Xeon® Processors are manufactured on the industry-leading 22nm process technology with 3D Tri-Gate transistors, delivering quad-core processing and intelligent performance capabilities, including Intel Turbo Boost Technology 2.0 and Hyper-Threading Technology. Additionally, it boosts performance to integer/matrix calculations through Intel Advanced Vector Extensions 2.0 enhancements.

Xeon E Processors (2100 Series)

Intel® Xeon® E Processors (2100 Series) deliver enhanced performance, reliability, and security for professional CAD, media, and mobile workstations. Xeon E Processors improve processor speed, memory capabilities, hardware, security, and reliability. The processors support 4K UHD Intel® graphics technology. The Xeon E is ideal for frequency-bound workstation applications with up to 6 cores and frequencies up to 4.7GHz.

4th Generation Processors

Intel 4th generation Core Processor family delivers Desktop, Mobile, and Embedded products with maximum performance per watt. Intel Haswell Architecture is based on a 22nm process and utilizes FinFET technology for reduced leakage and lowered power consumption. Idle state power consumption has been lowered, creating a 20x improvement from the previous generation, with a 3 second wakeup time possible using Intel Rapid Start.