|
|
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Industrial Temp - Tray
- AS4C1M16S-6TIN
- Alliance Memory
-
1:
NT$333.05
-
234預期2027/1/25
|
Mouser 元件編號
913-AS4C1M16S-6TIN
|
Alliance Memory
|
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Industrial Temp - Tray
|
|
234預期2027/1/25
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
16 Mbit
|
16 bit
|
166 MHz
|
TSOP-II-50
|
1 M x 16
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
AS4C1M16S-6
|
Tray
|
|
|
|
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 200Mhz, Commerical Temp - Tray
- AS4C4M16SA-5TCN
- Alliance Memory
-
1:
NT$413.35
-
108預期2026/12/2
|
Mouser 元件編號
913-AS4C4M16SA-5TCN
|
Alliance Memory
|
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 200Mhz, Commerical Temp - Tray
|
|
108預期2026/12/2
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
64 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-54
|
4 M x 16
|
4.5 ns
|
3 V
|
3.6 V
|
0 C
|
+ 70 C
|
AS4C4M16SA
|
Tray
|
|
|
|
DRAM 1G 32Mx32 400MHz LPDDR2 1.2/1.8V
- IS43LD32320C-25BLI
- ISSI
-
1:
NT$630.96
-
545在途量
-
工廠指定訂單
|
Mouser 元件編號
870-43LD32320C25BLI
工廠指定訂單
|
ISSI
|
DRAM 1G 32Mx32 400MHz LPDDR2 1.2/1.8V
|
|
545在途量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR2
|
1 Gbit
|
32 bit
|
400 MHz
|
FBGA-134
|
32 M x 32
|
|
1.14 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
IS43LD32320C
|
Reel
|
|
|
|
DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
ISSI IS43LQ16256B-062BLI
- IS43LQ16256B-062BLI
- ISSI
-
1:
NT$1,850.58
-
272預期2027/7/28
|
Mouser 元件編號
870-43LQ16256B062BLI
|
ISSI
|
DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
|
|
272預期2027/7/28
|
|
最少： 1
倍數： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 1G, 1.35V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
ISSI IS46TR16640CL-125JBLA2
- IS46TR16640CL-125JBLA2
- ISSI
-
1:
NT$639.21
-
570在途量
|
Mouser 元件編號
870-6TR640C125JBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 1G, 1.35V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
|
|
570在途量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR3L
|
1 Gbit
|
16 bit
|
1.066 GHz
|
BGA-96
|
64 M x 16
|
20 ns
|
1.283 V
|
1.45 V
|
- 40 C
|
+ 105 C
|
|
|
|
|
|
DRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS
ISSI IS66WVH16M8DBLL-100B1LI-TR
- IS66WVH16M8DBLL-100B1LI-TR
- ISSI
-
1:
NT$412.99
-
2,500預期2027/2/17
|
Mouser 元件編號
870-6WVDBL100B1LITR
|
ISSI
|
DRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS
|
|
2,500預期2027/2/17
|
|
最少： 1
倍數： 1
:
2,500
|
|
|
HyperRAM
|
128 Mbit
|
8 bit
|
100 MHz
|
TFBGA-24
|
16 M x 8
|
40 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
Reel, Cut Tape
|
|
|
|
DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
ISSI IS43LR16640C-6BLI
- IS43LR16640C-6BLI
- ISSI
-
1:
NT$1,059.01
-
300在途量
|
Mouser 元件編號
870-IS43LR16640C6BLI
|
ISSI
|
DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
|
|
300在途量
|
|
最少： 1
倍數： 1
|
|
|
|
|
|
|
BGA-60
|
|
|
|
|
|
|
|
|
|
|
|
DRAM 2G, 1.8V, Mobile DDR, 64Mx32, 200Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
ISSI IS43LR32640B-5BLI
- IS43LR32640B-5BLI
- ISSI
-
1:
NT$1,222.84
-
210在途量
|
Mouser 元件編號
870-IS43LR32640B5BLI
|
ISSI
|
DRAM 2G, 1.8V, Mobile DDR, 64Mx32, 200Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
|
|
210在途量
|
|
最少： 1
倍數： 1
|
|
|
|
|
|
|
BGA-90
|
|
|
|
|
|
|
|
|
|
|
|
DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s @ 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
ISSI IS46QR16512A-075VBLA2
- IS46QR16512A-075VBLA2
- ISSI
-
1:
NT$3,482.47
-
30預期2026/12/23
|
Mouser 元件編號
870-QR16512A075VBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s @ 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
|
|
30預期2026/12/23
|
|
最少： 1
倍數： 1
|
|
|
|
|
|
|
BGA-96
|
|
|
|
|
|
|
|
|
|
|
|
DRAM LPDDR2, 2G, 128M X 16, 1.2V, 134ball BGA A-DIE INDUSTRIAL TEMP - Tray
Alliance Memory AS4C128M16MD2A-25BIN
- AS4C128M16MD2A-25BIN
- Alliance Memory
-
1:
NT$1,786.41
-
121預期2026/11/26
|
Mouser 元件編號
913-4C12816MD2A25BIN
|
Alliance Memory
|
DRAM LPDDR2, 2G, 128M X 16, 1.2V, 134ball BGA A-DIE INDUSTRIAL TEMP - Tray
|
|
121預期2026/11/26
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR2
|
2 Gbit
|
16 bit
|
400 MHz
|
FBGA-134
|
128 M x 16
|
5.5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
AS4C128M16MD2A-25
|
Tray
|
|
|
|
DRAM DDR2 1Gb, 64Mx16, 800 at CL5, 1.8V, FBGA-84
- A3R1GE40JBF-8E
- Zentel Japan
-
1:
NT$495.81
-
102預期2026/11/9
|
Mouser 元件編號
155-A3R1GE40JBF-8E
|
Zentel Japan
|
DRAM DDR2 1Gb, 64Mx16, 800 at CL5, 1.8V, FBGA-84
|
|
102預期2026/11/9
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR2
|
1 Gbit
|
16 bit
|
400 MHz
|
FPGA-84
|
64 M x 16
|
400 ps
|
1.7 V
|
1.9 V
|
0 C
|
+ 85 C
|
DDR2
|
Tray
|
|
|
|
DRAM 16Mb 1Mx16 50ns Async FP DRAM
- IS41LV16105D-50TLI
- ISSI
-
1:
NT$319.42
-
117預期2027/3/16
|
Mouser 元件編號
870-41LV16105D50TLI
|
ISSI
|
DRAM 16Mb 1Mx16 50ns Async FP DRAM
|
|
117預期2027/3/16
|
|
最少： 1
倍數： 1
|
|
|
FPM DRAM
|
16 Mbit
|
16 bit
|
|
TSOP-II-44
|
1 M x 16
|
50 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS41LV16105D
|
Bulk
|
|
|
|
DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS, IT
- IS42S32160F-75ETLI
- ISSI
-
1:
NT$825.98
-
108在途量
|
Mouser 元件編號
870-42S32160F75ETLI
|
ISSI
|
DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS, IT
|
|
108在途量
|
|
最少： 1
倍數： 1
:
108
|
|
|
SDRAM
|
512 Mbit
|
32 bit
|
133 MHz
|
TSOP-II-86
|
16 M x 32
|
6 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42S32160F
|
Reel, Cut Tape
|
|
|
|
DRAM M-SDRAM,128M,3.3V 166MHz,4Mx32, IT
- IS42SM32400H-6BLI
- ISSI
-
1:
NT$288.23
-
240預期2027/9/7
|
Mouser 元件編號
870-42SM32400H-6BLI
|
ISSI
|
DRAM M-SDRAM,128M,3.3V 166MHz,4Mx32, IT
|
|
240預期2027/9/7
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile
|
128 Mbit
|
|
166 MHz
|
BGA-90
|
4 M x 32
|
8 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42SM32400H
|
Tray
|
|
|
|
DRAM 128M, 1.8V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
- IS42VM32400H-6BLI
- ISSI
-
1:
NT$338.42
-
230預期2027/8/11
|
Mouser 元件編號
870-42VM32400H-6BLI
|
ISSI
|
DRAM 128M, 1.8V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
|
|
230預期2027/8/11
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile
|
|
|
|
BGA-90
|
|
|
|
|
|
|
IS42VM32400H
|
Reel
|
|
|
|
DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
- IS43TR16128CL-125KBL
- ISSI
-
1:
NT$735.28
-
9在途量
|
Mouser 元件編號
870-43T16128CL125KBL
|
ISSI
|
DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
|
|
9在途量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR3L
|
2 Gbit
|
16 bit
|
800 MHz
|
BGA-96
|
128 M x 16
|
20 ns
|
1.283 V
|
1.45 V
|
0 C
|
+ 95 C
|
IS43TR16128CL
|
Tray
|
|
|
|
DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
- IS43TR82560DL-125KBLI
- ISSI
-
1:
NT$909.51
-
70在途量
|
Mouser 元件編號
870-43T82560DL125KBI
|
ISSI
|
DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
|
|
70在途量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR3L
|
2 Gbit
|
8 bit
|
|
BGA-78
|
256 M x 8
|
20 ns
|
1.425 V
|
1.575 V
|
- 40 C
|
+ 95 C
|
IS43TR82560DL
|
|
|
|
|
DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, Cu 54 pin TSOP II RoHS
- IS45S16160J-7CTLA1
- ISSI
-
1:
NT$479.67
-
108預期2026/11/4
|
Mouser 元件編號
870-45S16160J7CTLA1
|
ISSI
|
DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, Cu 54 pin TSOP II RoHS
|
|
108預期2026/11/4
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
256 Mbit
|
16 bit
|
143 MHz
|
TSOP-II-54
|
16 M x 16
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS45S16160J
|
|
|
|
|
DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS
- IS42S16800J-6BL
- ISSI
-
1:
NT$283.93
-
348預期2027/9/7
|
Mouser 元件編號
870-IS42S16800J-6BL
|
ISSI
|
DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS
|
|
348預期2027/9/7
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
128 Mbit
|
8 bit/16 bit
|
166 MHz
|
BGA-54
|
16 M x 8/8 M x 16
|
6.5 ns
|
3 V
|
3.6 V
|
0 C
|
+ 70 C
|
|
|
|
|
|
DRAM Automotive (-40 to +105C), 16M, 3.3V, SDRAM, 1Mx16, 143Mhz, 50 pin TSOP II (400 mil) RoHS
- IS45S16100H-7TLA2
- ISSI
-
1:
NT$262.78
-
117預期2027/10/19
|
Mouser 元件編號
870-IS45S16100H7TLA2
|
ISSI
|
DRAM Automotive (-40 to +105C), 16M, 3.3V, SDRAM, 1Mx16, 143Mhz, 50 pin TSOP II (400 mil) RoHS
|
|
117預期2027/10/19
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
16 Mbit
|
16 bit
|
143 MHz
|
TSOP-II-50
|
1 M x 16
|
|
3 V
|
3.6 V
|
- 40 C
|
+ 105 C
|
IS42S16100H
|
Tray
|
|
|
|
DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
- IS45S16400N-6TLA1
- ISSI
-
1:
NT$223.70
-
108在途量
|
Mouser 元件編號
870-IS45S16400N6TLA1
|
ISSI
|
DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
|
|
108在途量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
64 Mbit
|
16 bit
|
166 MHz
|
TSOP-II-54
|
4 M x 16
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
- IS45S32400J-6BLA2
- ISSI
-
1:
NT$352.76
-
239在途量
|
Mouser 元件編號
870-IS45S32400J6BLA2
|
ISSI
|
DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
|
|
239在途量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
128 Mbit
|
32 bit
|
166 MHz
|
TSOP-II-86
|
4 M x 32
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 105 C
|
|
|
|
|
|
DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
- IS66WVS8M8FALL-104NLI
- ISSI
-
1:
NT$229.08
-
200預期2026/11/3
|
Mouser 元件編號
870-WVS8M8FALL104NLI
|
ISSI
|
DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
|
|
200預期2026/11/3
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
104 MHz
|
SOIC-8
|
8 M x 8
|
7 ns
|
1.65 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM 1G, 1.2/1.8V, LPDDR2, 32Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT
ISSI IS43LD32320C-18BLI
- IS43LD32320C-18BLI
- ISSI
-
1:
NT$597.62
-
171預期2027/5/18
-
工廠指定訂單
|
Mouser 元件編號
870-43LD32320C18BLI
工廠指定訂單
|
ISSI
|
DRAM 1G, 1.2/1.8V, LPDDR2, 32Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT
|
|
171預期2027/5/18
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR2
|
|
|
|
BGA-134
|
|
|
|
|
|
|
IS43LD32320C
|
|
|
|
|
DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
ISSI IS42S16320F-7CTLI
- IS42S16320F-7CTLI
- ISSI
-
1:
NT$649.96
-
108在途量
-
新產品
|
Mouser 元件編號
870-IS42S16320F7CTLI
新產品
|
ISSI
|
DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
|
|
108在途量
|
|
最少： 1
倍數： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
