DRAM

結果: 2,723
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
Alliance Memory DRAM DDR3, 4G, 256M x 16, 1.5V, 96-ball FBGA, 800MHz, Industrial Temp - Tray
2,926在途量
最少: 1
倍數: 1

SDRAM - DDR3 4 Gbit 16 bit 800 MHz FBGA-96 256 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C Tray
Alliance Memory DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 933MHZ, Industrial Temp - Tray
415預期2026/9/21
最少: 1
倍數: 1

SDRAM - DDR3L 4 Gbit 16 bit 933 MHz FBGA-96 256 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C Tray
Alliance Memory DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
360預期2026/12/7
最少: 1
倍數: 1

SDRAM - DDR3L 8 Gbit 16 bit 800 MHz FBGA-96 512 M x 16 1.283 V 1.45 V 0 C + 95 C AS4C512M16D3LA Tray
Alliance Memory DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
360預期2026/12/7
最少: 1
倍數: 1

SDRAM - DDR3L 8 Gbit 16 bit 800 MHz FBGA-96 512 M x 16 1.283 V 1.45 V - 40 C + 95 C AS4C512M16D3LA Tray
Alliance Memory DRAM DDR3L, 8Gb, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP B Die(MT41K512M16HA-125IT:A),
720預期2026/12/17
最少: 1
倍數: 1

SDRAM - DDR3L 8 Gbit 16 bit 800 MHz FBGA-96 512 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C AS4C512M16D3LB-12 Tray
Alliance Memory DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Commercial Temp Rev.D Tray
210預期2026/8/6
最少: 1
倍數: 1
SDRAM - DDR4 8 Gb 8 bit 1.6 GHz FBGA-78 1 G x 8 1.14 V 1.26 V 0 C + 95 C
Alliance Memory DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 800MHZ, Automotive Temp - Tray 前置作業時間 30 週
最少: 1
倍數: 1

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz FBGA-96 256 M x 16 20 ns 1.283 V 1.45 V - 40 C + 105 C Tray
Alliance Memory DRAM DDR4, 8Gb, 512M x 16, 1.2V, 96-ball FBGA, 1600Mhz, Commercial Temp Rev.D Tray
210預期2026/8/6
最少: 1
倍數: 1
SDRAM - DDR4 8 Gb 16 bit 1.6 GHz FBGA-96 512 M x 16 1.14 V 1.26 V 0 C + 95 C
Alliance Memory DRAM DDR2, 2G, 128M x 16, 1.8V, 400 Mhz, 84ball FBGA, (A-die), Industrial Temp - Tray
190在途量
最少: 1
倍數: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz FBGA-84 128 M x 16 400 ps 1.7 V 1.9 V 0 C + 95 C AS4C128M16D2A-25 Tray
Alliance Memory DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
324預期2026/8/13
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C Tray
Alliance Memory DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
539預期2026/9/14
最少: 1
倍數: 1

SDRAM 512 Mbit 16 bit 166 MHz TSOP-II-54 32 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C AS4C32M16SB Tray
Alliance Memory DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
540預期2026/9/21
最少: 1
倍數: 1

SDRAM 512 Mbit 16 bit 143 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C AS4C32M16SB Tray
Alliance Memory DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
581預期2026/8/13
最少: 1
倍數: 1

SDRAM - DDR 512 Mbit 8 bit 200 MHz FBGA-60 64 M x 8 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C64M8D1 Tray
ISSI IS43LQ32256B-062BLI
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
680預期2027/5/3
最少: 1
倍數: 1

ISSI IS43LR16128B-5BLI-TR
ISSI DRAM 2G, 1.8V, Mobile DDR, 128Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT, T&R
1,995預期2027/6/28
最少: 1
倍數: 1
: 2,000

BGA-60 Reel, Cut Tape, MouseReel
ISSI IS46LQ32256A-062BLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
408在途量
最少: 1
倍數: 1

SDRAM Mobile - LPDDR4 8 Gbit 32 bit 1.6 GHz BGA-200 256 M x 32 1.06 V 1.95 V - 40 C + 105 C
ISSI IS46TR16256ECL-125LB2LA2
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.35V, DDR3L w/ ECC,256Mx16, 1600MT/s at 12-11-11, 96 ball BGA (10mm x14mm) RoHS
460在途量
最少: 1
倍數: 1

BGA-96
ISSI IS46QR16512A-083TBLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2400MT/s at 17-17-17, 96 ball BGA (10mm x14mm) RoHS, IT
791預期2027/2/15
最少: 1
倍數: 1

BGA-96
Alliance Memory AS4C512M16D4D-62BIN
Alliance Memory DRAM DDR4, 8Gb, 512M x 16, 1.2V, 96-ball FBGA, 1600Mhz, Industrial Temp Rev.D Tray
209預期2026/8/11
最少: 1
倍數: 1
Alliance Memory AS4C1G8D4D-62BIN
Alliance Memory DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Industrial Temp Rev.D, Tray
210預期2026/8/11
最少: 1
倍數: 1
ISSI DRAM 64M, 3.3V, 143Mhz 2Mx32 SDR SDRAM
540預期2026/8/26
最少: 1
倍數: 1

SDRAM 64 Mbit 32 bit 143 MHz TSOP-II-86 2 M x 32 5.5 ns 3 V 3.6 V - 40 C + 85 C IS45S32200L Tray
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
190在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz BGA-90 4 M x 32 6 ns 3 V 3.6 V - 40 C + 105 C IS45S32400F Tray
ISSI DRAM 1G, 1.5V, DDR3, 64Mx16, 1600MT/s at 10-10-10, 96 ball BGA (9mm x13mm) RoHS
950在途量
最少: 1
倍數: 1

SDRAM - DDR3 1 Gbit 16 bit 800 MHz BGA-96 64 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C IS43TR16640C
ISSI DRAM 1G, 1.35V, DDR3, 64Mx16, 1600MT/s at 10-10-10, 96 ball BGA (9mm x13mm) RoHS. IT
1,710在途量
最少: 1
倍數: 1

SDRAM - DDR3L 1 Gbit 16 bit 800 MHz BGA-96 64 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16640CL
ISSI DRAM DDR2,2G,1.8V, RoHs 400MHz,128Mx16, IT
183在途量
最少: 1
倍數: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz BGA-84 128 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16128C Reel