SiC MOSFETs

Results: 59
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (TWD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
Datasheet
32In Stock
Min.: 1
Mult.: 1

Through Hole STPAK-4 1 Channel 1.2 kV 239 A 8.5 mOhms - 10 V, + 22 V 4.4 V 304 nC - 55 C + 200 C 994 W AEC-Q100
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datasheet
2,309In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

SMD/SMT PowerFLAT-5 1 Channel 650 V 40 A 67 mOhms - 10 V, + 22 V 5 V 73 nC - 55 C + 175 C 417 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
Datasheet
7In Stock
600Expected 2/5/2027
Min.: 1
Mult.: 1
: 600

AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
Datasheet
630In Stock
Min.: 1
Mult.: 1

Through Hole HiP247-3 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
Datasheet
540In Stock
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
Datasheet
448In Stock
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 77 nC - 55 C + 200 C 398 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
Datasheet
256In Stock
600On Order
Min.: 1
Mult.: 1

Through Hole Hip247-4 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
Datasheet
250In Stock
600Expected 3/12/2027
Min.: 1
Mult.: 1

Through Hole HiP247-3 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
Datasheet
599In Stock
1,000Expected 4/23/2027
Min.: 1
Mult.: 1
: 1,000

SMD/SMT H2PAK-7 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Datasheet
246In Stock
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 650 V 60 A 29 mOhms - 18 V, + 18 V 4.2 V 51 nC - 55 C + 200 C 313 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Datasheet
487In Stock
Min.: 1
Mult.: 1

Through Hole HiP247-4 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Datasheet
481In Stock
Min.: 1
Mult.: 1

Through Hole HiP247-4 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
Datasheet
1,404In Stock
Min.: 1
Mult.: 1
: 1,800

SMD/SMT TOLL-8 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datasheet
22In Stock
1,000Expected 1/29/2027
MouseReel Available
Min.: 1
Mult.: 1
: 1,000

SMD/SMT H2PAK-7 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datasheet
13In Stock
1,200On Order
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
Datasheet
112In Stock
600Expected 9/7/2026
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
Datasheet
36In Stock
600Expected 5/7/2027
Min.: 1
Mult.: 1

Through Hole HiP-247-3 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datasheet
35In Stock
1,200Expected 1/29/2027
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 41 nC - 55 C + 200 C 236 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
Datasheet
730In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 1,000

SMD/SMT 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Datasheet
334In Stock
Min.: 1
Mult.: 1

Through Hole 1 Channel 1.2 kV 20 A 239 mOhms - 20 V, + 20 V 3.5 V 45 nC - 55 C + 200 C 175 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datasheet
1,301In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

SMD/SMT PowerFLAT-5 1 Channel 650 V 40 A 18 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 175 C 935 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
Datasheet
5In Stock
1,200Expected 2/19/2027
MouseReel Available
Min.: 1
Mult.: 1
: 600

SMD/SMT HU3PAK-7 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
Datasheet
14In Stock
1,800Expected 2/5/2027
Min.: 1
Mult.: 1
: 1,800

SMD/SMT TOLL-8 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
5In Stock
600Expected 4/16/2027
Min.: 1
Mult.: 1

Through Hole HiP-247-4 1 Channel 650 V 30 A 72 mOhms - 18 V, + 18 V 4.2 V 32 nC - 55 C + 200 C 210 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
14In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT H2PAK-7 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101