ROHM Semiconductor RS1G201ATTB1 Power MOSFET
ROHM Semiconductor RS1G201ATTB1 Power MOSFET features Pb-free plating, low on-resistance, and HSOP8 small surface-mount package. This MOSFET operates at -55°C to 150°C temperature range, -40V drain-source voltage, ±80A pulsed drain current, and ±20V gate-source voltage. The RS1G201ATTB1 power MOSFET is ideal for use in load switching.
Features
- Low on-resistance
- HSOP8 small surface-mount package
- Pb-free plating
- RoHS compliant
Specifications
- -55°C to 150°C operating temperature range
- -40V drain-source voltage
- ±80A pulsed drain current
- ±20V gate-source voltage
- 40W power dissipation
- 150°C junction temperature
Inner Circuit
發佈日期: 2021-02-23
| 更新日期: 2022-03-11