ROHM Semiconductor SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

Features

Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel

Simple to drive
TO-247-4L package
Pb-free lead plating
RoH compliant

Applications

Solar inverters
DC/DC converters

Switch-mode power supplies
Induction heating

Specifications

750V maximum drain-source voltage
Maximum continuous drain/source current
- 105A at +25°C
- 74A at +100°C
80μA maximum zero gate voltage drain current
233A maximum pulsed drain current
Body diode
- Maximum forward current
  - 105A pulsed
  - 233A surge
- 3.3V typical forward voltage
- 16ns typical reverse recovery time
- 290nC reverse recovery charge
- 36A typical peak reverse recovery current
-4V to 21V maximum DC gate-source voltage range
-4V to 23V maximum gate-source surge voltage range
Maximum recommended gate-source drive voltage
- 15V to 18V maximum turn-on range
- 0V turn-off
±100nA gate-source leakage current
2.8V to 4.8V gate threshold voltage range
Drain-source on-state resistance
- 16.9mΩ maximum static at +25°C
- 13mΩ typical

1Ω typical gate input resistance
0.48K/W junction-to-case thermal resistance
32S transconductance
Typical capacitance
- 4580pF input
- 203pF output
- 10pF reverse transfer
- 263pF effective output, energy-related
Typical gate
- 170nC total
- 39nC source charge
- 42nC drain charge
Typical time
- 17ns turn-on delay
- 32ns rise
- 82ns turn-off delay
- 17ns fall
Typical switching losses
- 500μJ turn-on
- 310μJ turn-off
11.5µs to 12.0µs typical short-circuit withstand time
+175°C maximum virtual junction temperature