新型離散半導體
Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode is a bidirectional ESD‑rated clamping device designed to safeguard power interfaces, control lines, or low‑speed data lines within electronic systems. Engineered to protect sensitive components connected to power and control paths, the Taiwan Semiconductor TESDA1L2B17P1Q1 helps prevent damage from electrostatic discharge (ESD) and lightning‑induced overvoltage events.
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Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection DiodeSafeguards power interfaces, control lines, or low‑speed data lines within electronic systems.2026/2/19
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Semtech TDS5311P SurgeSwitch™ 1-Line 53V EOS Protection ICProvides high-energy EOS protection with superior temperature and clamping characteristics.2026/2/18 -
Vishay SE45124/SE50124 SMD High Voltage RectifiersThese devices feature excellent heat dissipation and high surge current capability.2026/2/17 -
Vishay KBPE0480 Single In-Line Bridge RectifierThese devices feature a low forward-voltage drop and are available in the KBP package.2026/2/16 -
Vishay SE050N6/SE080N6/SE100N6/SE120N6 SMD RectifiersThese devices are available in a low-profile package with a typical height of only 0.88mm.2026/2/10 -
Littelfuse CMA160E1600HF單晶閘管High‑performance 160A, 1600V device featuring a planar passivated chip structure in PLUS247 package.2026/2/6 -
TDK-Lambda i1R ORing MOSFET ModulesHigh-efficiency and low-loss power devices designed to replace traditional diodes.2026/2/5 -
Vishay SE40CLJ Surface-Mount High Voltage RectifiersDesigned for demanding power conversion applications2026/2/3 -
Vishay SE30CLJ Surface-Mount High Voltage RectifiersEngineered for robust performance in demanding power conversion applications.2026/2/3 -
Diotec Semiconductor BZX84B3V6 SMD Planar Zener DiodeOffers a sharp Zener voltage breakdown and a low leakage current.2026/2/3 -
Vishay Power Silicon Carbide Schottky DiodesDelivers exceptional efficiency, ruggedness, and reliability in demanding power‑electronics apps.2026/2/3 -
Vishay High Current Density/Voltage Schottky RectifiersDelivers robust performance for demanding power‑conversion applications.2026/2/3 -
IXYS X4-Class 功率MOSFETOffer low on-state resistance and conduction losses, with improved efficiency.2026/2/2 -
IXYS DP高壓快速恢復二極體600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.2026/1/20 -
Qorvo QPD1014A GaN Input Matched Transistors15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.2026/1/20 -
Qorvo QPD1011A GaN Input Matched Transistors7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.2026/1/19 -
Qorvo QPD1004A GaN Input Matched Transistors25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.2026/1/19 -
Littelfuse SM15KPA-HRA與SM30KPA-HRA高可靠性二極體Protects I/O interfaces, VCC bus, and other circuits in avionics, aviation, and eVTOL applications.2026/1/13 -
Littelfuse SP432x-01WTG TVS二極體Provide ultra-low capacitance, bidirectional, and a high level of protection.2026/1/8 -
onsemi NVBYST0D6N08X 80V N-Channel Power MOSFETThis device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.2025/12/26 -
Infineon Technologies OptiMOS™ 6 80V Power MOSFETsSets industry benchmark performance with a wide portfolio offering.2025/12/23 -
onsemi NVMFD5877NL 雙路N溝道MOSFET專為緊湊且高效的設計而設計，包括高熱性能。2025/12/19 -
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.2025/12/19 -
STMicroelectronics SGT080R70ILB E-Mode PowerGaN TransistorE-Mode PowerGaN transistor designed for high-efficiency power conversion applications.2025/12/4 -
onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.2025/12/4