Vishay / Siliconix SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs
Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low RDS(on). These power MOSFETs offer 30V VDS and very low RDS x Qg Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A ID and 19.9nC Qg. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A ID and 21nC Qg. This 100% Rg and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.
Features
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg Figure-of-Merit (FOM)
- Enables higher power density with very low RDS(on)
- Thermally enhanced compact PowerPAK® 1212-8S package with a single configuration
- 100% Rg and UIS tested
Applications
- DC/DC converters
- Point-of-Loads (POLs)
- Synchronous rectification
- Battery management
- Power and load switches
Associated Products
Vishay / Siliconix TrenchFET® Gen V Power MOSFETs with VDS
Increases power conversion efficiency with a very low RDS x Qg figure-of-merit (FOM).
Package Style
View Results ( 4 ) Page
| 零件編號 | 規格書 | 封裝/外殼 | Vds - 漏-源擊穿電壓 | Id - C連續漏極電流 | Rds On - 漏-源電阻 | Qg - 閘極充電 | Pd - 功率消耗 |
|---|---|---|---|---|---|---|---|
| SIJH5100E-T1-GE3 |  |
PowerPAK-4 | 100 V | 277 A | 1.89 mOhms | 85 nC | 333 W |
| SIR5607DP-T1-RE3 | |
SO-8 | 60 V | 90.9 A | 7 mOhms | 31.7 nC | 104 W |
| SISS54DN-T1-GE3 | |
PowerPAK-1212-8S | 30 V | 185.6 A | 1.06 mOhms | 47.5 nC | 65.7 W |
| SISS52DN-T1-GE3 | |
PowerPAK1212-8S | 30 V | 162 A | 1.2 mOhms | 65 nC | 57 W |
發佈日期: 2020-10-06
| 更新日期: 2024-12-12