Toshiba GT20N135SRA Silicon N-Channel IGBT
Toshiba GT20N135SRA Silicon N-Channel IGBT is a 6.5th generation IGBT and consists of a Freewheeling Diode (FWD) monolithically integrated with an IGBT chip. This IGBT features a low saturation voltage of 1.60V and operates at a maximum of 175°C high junction temperature and 0.25µs of high-speed switching. The GT20N135SRA Silicon N-Channel IGBT is ideal for voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.
Features
- 6.5th generation
- Enhancement mode
- Freewheeling Diode (FWD) monolithically integrated with an IGBT chip
Specifications
- Low saturation voltage
- VCE(sat)=1.60V (typical)
- IC=20A
- Ta=25°C
- High-speed switching of IGBT tf=0.25µs (typical)
- High junction temperature of Tj=175°C (max)
Applications
- Voltage-resonant inverter switching
- Soft switching
- Induction cooktops and home appliances
Package Dimensions
發佈日期: 2020-03-01
| 更新日期: 2024-11-08