Toshiba High Voltage DTMOS VI MOSFETs in TOLL Package
Toshiba High Voltage DTMOSVI MOSFETs in TOLL Package feature a low drain-source on-resistance (Rdson) and high-speed switching properties with lower capacitance. This makes them ideal for switching power supply applications. This latest generation DTMOSVI offers the lowest figure of merit RDS(ON)xQgd, and is housed in the new TOLL package (9.9×11.68×2.3mm) with a Kelvin Source connection to reduce turn-on and turn-off losses.
Features
- Reduction in COSS
- Application of latest process technology single epitaxial process
- Wide range of on-resistances and packaging options
- Lowest Figure of Merit (RDS(ON) x QGD) offered by DTMOS VI
- Improved RDS(ON) vs Area trade-off
- Stable on-resistance at higher temperatures
- DTMOS VI for highest efficiency switching in power supplies
- Reduced heat system costs
- Less costs of field failure
- Less passive component costs
- Easy design-in for faster time to market and product launch
- Ready to support high volume markets with competitive prices
- Allows higher power density
Applications
- Data Center, PV-Inverter, UPS
- Switched-mode power supply
- Lighting
- Power factor control
- Industrial applications
Overview
Related Products
Toshiba DTMOSVI MOSFET
650V功率MOSFET提供0.033Ω（典型值）低漏源導通電阻。
Comparisons of figures of merit
Additional Resources
發佈日期: 2021-02-19
| 更新日期: 2022-03-11