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Vishay Semiconductors MXP120A MaxSiC™ 1200V N-Channel MOSFETs

Vishay Semiconductors MXP120A MaxSiC™ 1200V N-Channel MOSFETs feature 1200V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 56W to 268W (Tc=25°C) and continuous drain current of 10.5A to 52A (Tc=25°C). The MXP120A MaxSiC™ 1200V N-Channel MOSFETs are halogen-free and are available in TO-247 3L, TO-247 4L, and TO-263 7L packages. These MOSFETs are used in chargers, auxiliary motor drives, and DC-DC converters.

Features

  • Fast switching speed
  • 3μs short circuit withstand time
  • 1200V drain-source voltage
  • 56W to 268W maximum power dissipation (Tc=25°C)
  • 10.5A to 52W continuous drain current (Tc=25°C)
  • -55°C to 150°C operating junction temperature range
  • Lead-free and halogen-free
  • Available in a TO-247 3L, TO-247 4L, or TO-263 7L packages
  • RoHS compliant

Applications

  • Chargers
  • DC-DC converters
  • Auxiliary motor drives

Videos

Pin Diagram

Application Circuit Diagram - Vishay Semiconductors MXP120A MaxSiC™ 1200V N-Channel MOSFETs
發佈日期: 2024-08-12 | 更新日期: 2026-02-13