PANJIT 60V N-Channel Enhancement Mode MOSFETs
PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.
Features
- Low reverse transfer capacitance
- AEC-Q101 qualified
- Solderable terminals per MIL-STD-750, Method 2026
- Lead-free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
Applications
- Automotive LED lighting
- Wireless chargers
- DC/DC converters
Specifications
- 60V maximum drain-source
- ±20V maximum gate-source
- 272A maximum pulsed drain current at +25°C
- Maximum single pulse avalanche
- 28A current
- 39mJ energy
- -55°C to +150°C operating junction temperature range
- Thermal resistance
- 2.5°C/W junction-to-case (bottom)
- 28°C/W junction-to-case (top)
- 50°C/W junction-to-ambient
Package Dimensions
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View Results ( 5 ) Page
| 零件編號 | 規格書 | 封裝/外殼 | Id - C連續漏極電流 | Rds On - 漏-源電阻 | Qg - 閘極充電 | Pd - 功率消耗 | 上升時間 | 下降時間 |
|---|---|---|---|---|---|---|---|---|
| PJP125N06SA-AU_T0_006A1 |  |
TO-220AB-3 | 215 A | 2.6 mOhms | 82 nC | 214 W | 26 ns | 37 ns |
| PJP100N06SA-AU_T0_006A1 | |
TO-220AB-3 | 95 A | 6.1 mOhms | 40 nC | 100 W | 35 ns | 59 ns |
| PJP75N06SA-AU_T0_006A1 | |
TO-220AB-3 | 64 A | 9 mOhms | 27 nC | 75 W | 28 ns | 50 ns |
| PSMQC060N06LS1-AU_R2_006A1 | |
DFN-5060-8 | 68 A | 6 mOhms | 19 nC | 50 W | 85 ns | 33 ns |
| PSMQC060N06LS1 | |
發佈日期: 2023-05-26
| 更新日期: 2024-09-06