Toshiba TK110N65Z DTMOSVI Power MOSFET
Toshiba TK110N65Z DTMOSVI Power MOSFET features a low drain-source on-resistance of RDS(ON) = 0.092Ω (typ.). The MOSFET has high-speed switching properties, lower capacitance, and an enhancement mode of Vth = 3V to 4V (VDS = 10V, ID = 1.02mA). The Toshiba TK110N65Z is ideal for switching power supply applications.
Features
- Low drain-source on-resistance: RDS(ON) = 0.092Ω (typ.)
- High-speed switching properties with a lower capacitance
- Enhancement mode: Vth = 3 to 4V (VDS = 10V, ID = 1.02mA)
- Applications, switching power supplies
Packaging and Internal Circuit
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Toshiba DTMOSVI MOSFET
650V功率MOSFET提供0.033Ω（典型值）低漏源導通電阻。
發佈日期: 2020-12-10
| 更新日期: 2024-11-26