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Vishay SiR680ADP N-Channel (D-S) MOSFET

Vishay SiR680ADP N-Channel (D-S) MOSFET is a TrenchFET® Gen IV power MOSFET featuring low RDS - Qg Figure Of Merit (FOM). This MOSFET is tuned for the lowest RDS to Qoss FOM and 100% Rg and UIS tested. The SiR680ADP MOSFET operates within a -55°C to +150°C temperature range. This MOSFET features an 80V drain-source voltage, ±20V gate-source voltage, and 125A pulse drain current. The SiR680ADP MOSFET comes in a PowerPAK SO-8 package. This MOSFET is ideal for synchronous rectification of primary side switches, DC/DC converters, OR-ing, power supplies, and motor drive control.

Features

  • TrenchFET® Gen IV power MOSFET
  • Very low RDS - Qg Figure Of Merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • Single configuration
  • 100% Rg and UIS tested
  • PowerPAK SO-8 package
  • Lead-free, Halogen-free, and RoHS compliant

Applications

  • Synchronous rectification
  • Primary side switches
  • DC/DC converters
  • OR-ing
  • Power supplies
  • Motor drive control
  • Battery and load switches

Specifications

  • -55°C to +150°C operating temperature range
  • 80V drain-source voltage
  • ±20V gate-source voltage
  • 125A pulse drain current

Videos

Infographic

Infographic - Vishay SiR680ADP N-Channel (D-S) MOSFET

Associated Product

Vishay / Siliconix TrenchFET第四代MOSFET

在4.5V電壓下可提供低至1.35mΩ的工業低導通電阻。

Learn More關於Vishay / Siliconix TrenchFET第四代MOSFET View Products與Vishay / Siliconix TrenchFET第四代MOSFET相關
發佈日期: 2020-06-16 | 更新日期: 2024-12-20