|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R004M2HXUMA1
- Infineon Technologies
-
1:
NT$2,615.97
-
1,467庫存量
-
1,500在途量
-
新產品
|
Mouser 元件編號
726-IMCQ120R004M2HXU
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,467庫存量
1,500在途量
在途量:
750 預期2026/9/3
750 預期2026/10/15
|
|
|
NT$2,615.97
|
|
|
NT$2,272.53
|
|
|
NT$2,048.11
|
|
|
NT$1,901.48
|
|
|
NT$1,901.48
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
403 A
|
10.4 mOhms
|
- 10 V, 25 V
|
5.1 V
|
348 nC
|
- 55 C
|
+ 175 C
|
1.5 kW
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
NT$712.34
-
188庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R018CM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
188庫存量
|
|
|
NT$712.34
|
|
|
NT$542.41
|
|
|
NT$452.07
|
|
|
NT$389.69
|
|
|
NT$341.65
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
NT$510.86
-
215庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R036AM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
215庫存量
|
|
|
NT$510.86
|
|
|
NT$388.97
|
|
|
NT$324.08
|
|
|
NT$288.95
|
|
|
NT$269.95
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
NT$460.31
-
182庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R036CM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
182庫存量
|
|
|
NT$460.31
|
|
|
NT$254.89
|
|
|
NT$242.70
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
NT$1,485.62
-
5庫存量
-
960在途量
-
新產品
|
Mouser 元件編號
726-IMZC120R007M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
5庫存量
960在途量
|
|
|
NT$1,485.62
|
|
|
NT$1,129.99
|
|
|
NT$1,038.93
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R010M2HXTMA1
- Infineon Technologies
-
1:
NT$1,164.05
-
464庫存量
-
3,000預期2026/9/10
-
新產品
|
Mouser 元件編號
726-IMCQ120R010M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
464庫存量
3,000預期2026/9/10
|
|
|
NT$1,164.05
|
|
|
NT$931.74
|
|
|
NT$805.91
|
|
|
NT$722.74
|
|
|
NT$722.74
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
NT$1,552.66
-
586庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R012M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
586庫存量
|
|
|
NT$1,552.66
|
|
|
NT$1,205.28
|
|
|
NT$1,125.33
|
|
|
NT$1,125.33
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
NT$513.37
-
1,798庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R026M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,798庫存量
|
|
|
NT$513.37
|
|
|
NT$359.22
|
|
|
NT$295.40
|
|
|
NT$289.67
|
|
|
NT$276.05
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
NT$427.69
-
1,440庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R034M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,440庫存量
|
|
|
NT$427.69
|
|
|
NT$291.82
|
|
|
NT$249.52
|
|
|
NT$225.50
|
|
|
NT$216.53
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
NT$339.14
-
330庫存量
-
750預期2026/10/15
-
新產品
|
Mouser 元件編號
726-IMCQ120R053M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
330庫存量
750預期2026/10/15
|
|
|
NT$339.14
|
|
|
NT$223.35
|
|
|
NT$172.08
|
|
|
NT$160.61
|
|
|
NT$160.61
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
NT$297.56
-
856庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R078M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
856庫存量
|
|
|
NT$297.56
|
|
|
NT$202.19
|
|
|
NT$148.06
|
|
|
NT$144.48
|
|
|
NT$135.15
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
NT$856.10
-
692庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R026M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
692庫存量
|
|
|
NT$856.10
|
|
|
NT$617.34
|
|
|
NT$570.37
|
|
|
NT$532.73
|
|
|
NT$532.73
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
NT$678.28
-
660庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R040M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
660庫存量
|
|
|
NT$678.28
|
|
|
NT$482.54
|
|
|
NT$423.75
|
|
|
NT$395.43
|
|
|
NT$395.43
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
-
1:
NT$573.60
-
199庫存量
-
750預期2026/11/19
-
新產品
|
Mouser 元件編號
726-IMSQ120R053M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
199庫存量
750預期2026/11/19
|
|
|
NT$573.60
|
|
|
NT$404.03
|
|
|
NT$382.88
|
|
|
NT$318.71
|
|
|
NT$318.71
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
NT$954.69
-
105庫存量
-
240預期2026/9/17
-
新產品
|
Mouser 元件編號
726-IMZA120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
105庫存量
240預期2026/9/17
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
NT$618.05
-
341庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
341庫存量
|
|
|
NT$618.05
|
|
|
NT$381.09
|
|
|
NT$350.97
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
NT$428.05
-
352庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R040M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
352庫存量
|
|
|
NT$428.05
|
|
|
NT$255.61
|
|
|
NT$217.97
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
NT$954.69
-
625庫存量
-
240預期2026/11/12
-
新產品
|
Mouser 元件編號
726-IMZC120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
625庫存量
240預期2026/11/12
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
NT$748.55
-
554庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R017M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
554庫存量
|
|
|
NT$748.55
|
|
|
NT$540.62
|
|
|
NT$469.64
|
|
|
NT$448.48
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
NT$664.30
-
1,397庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,397庫存量
|
|
|
NT$664.30
|
|
|
NT$457.45
|
|
|
NT$395.07
|
|
|
NT$368.18
|
|
|
NT$350.97
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
NT$552.09
-
225庫存量
-
240在途量
-
新產品
|
Mouser 元件編號
726-IMZC120R026M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
225庫存量
240在途量
|
|
|
NT$552.09
|
|
|
NT$391.48
|
|
|
NT$331.97
|
|
|
NT$291.82
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
NT$449.56
-
961庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R034M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
961庫存量
|
|
|
NT$449.56
|
|
|
NT$269.95
|
|
|
NT$232.31
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
NT$364.24
-
687庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R053M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
687庫存量
|
|
|
NT$364.24
|
|
|
NT$214.74
|
|
|
NT$181.76
|
|
|
NT$181.40
|
|
|
NT$176.38
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
NT$1,293.11
-
933庫存量
-
1,000預期2026/10/15
|
Mouser 元件編號
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
933庫存量
1,000預期2026/10/15
|
|
|
NT$1,293.11
|
|
|
NT$970.82
|
|
|
NT$970.46
|
|
|
NT$918.48
|
|
|
NT$906.65
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
NT$689.75
-
3,134庫存量
|
Mouser 元件編號
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,134庫存量
|
|
|
NT$689.75
|
|
|
NT$491.50
|
|
|
NT$438.09
|
|
|
NT$434.86
|
|
|
NT$404.03
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
臺灣