Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

記憶體 IC的類型

變更類別視圖
結果: 51
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品類型 安裝風格 封裝/外殼 存儲容量 接口類型
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4,005庫存量
最少: 1
倍數: 1
: 2,500

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 86庫存量
最少: 1
倍數: 1

DRAM SMD/SMT SOIC-8 32 Mbit
ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 480庫存量
最少: 1
倍數: 1

SRAM SMD/SMT TFBGA-48 16 Mbit Parallel
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 369庫存量
最少: 1
倍數: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 480庫存量
最少: 1
倍數: 1

SRAM SMD/SMT TFBGA-48 32 Mbit Parallel
ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 514庫存量
最少: 1
倍數: 1

SRAM SMD/SMT 16 Mbit Parallel

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 755庫存量
最少: 1
倍數: 1

SRAM SMD/SMT TSOP-44 8 Mbit Parallel
ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS 480庫存量
最少: 1
倍數: 1

SRAM SMD/SMT 32 Mbit Parallel
ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 551庫存量
最少: 1
倍數: 1

SRAM SMD/SMT 64 Mbit Parallel
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS 310庫存量
最少: 1
倍數: 1

SRAM SMD/SMT 32 Mbit Parallel
ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns 215庫存量
最少: 1
倍數: 1

SRAM SMD/SMT 32 Mbit Parallel
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885庫存量
最少: 1
倍數: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 736庫存量
最少: 1
倍數: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 782庫存量
最少: 1
倍數: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450庫存量
最少: 1
倍數: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1,775庫存量
最少: 1
倍數: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 890庫存量
800預期2026/8/31
最少: 1
倍數: 1

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 135庫存量
最少: 1
倍數: 1

DRAM SMD/SMT SOIC-8 32 Mbit
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 134庫存量
最少: 1
倍數: 1

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8 131庫存量
100預期2027/3/23
最少: 1
倍數: 1

DRAM SMD/SMT SOIC-8 64 Mbit

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 496庫存量
最少: 1
倍數: 1
: 1,000

SRAM SMD/SMT TSOP-44 8 Mbit Parallel
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 2,319庫存量
最少: 1
倍數: 1
: 2,500

SRAM SMD/SMT TFBGA-48 32 Mbit Parallel
ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1,945庫存量
最少: 1
倍數: 1

SRAM SMD/SMT 8 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 202庫存量
最少: 1
倍數: 1

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 149庫存量
2,500預期2026/9/7
最少: 1
倍數: 1
: 2,500

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel